Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy

Abstract

Metastable Ge 1Ϫy C y alloys were grown by molecular beam epitaxy as homogeneous solid solutions having a diamond lattice structure. The substrates were ͑100͒ oriented Si wafers and the growth temperature was 600°C. We report on measurements of the composition, structure, lattice constant, and optical absorption of the alloy layers. In thick relaxed layers, C atomic fractions up to 0.03 were obtained with a corresponding band gap of 0.875 eV. These alloys offer new opportunities for fundamental studies, and for the development of silicon-based heterostructure devices.

Fabrication and Optical Properties of Erbium‐Doped Germanium Nanowires

“…[6] For the preparation of the core Ge NW structures necessary for these experiments, we have developed a simple vapor-transport method that relies on a combination of Ge + C in the original reactant source. While Ge±C alloying is thermodynamically disfavored under these conditions, [4,21] the presence of carbon particles drastically reduces the ability of the (molten) Ge to agglomerate into larger droplets, such that the maximum surface area of the molten Ge and subsequent optimal evaporation of Ge are retained (see Supporting Information). Scanning electron microscopy (SEM) images (Fig.…”

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

“…E 4 C compounds with a Ge 4 C core could enable growth of dilute germanium carbide semiconductors with fully substitutional (sp 3 ) carbon in a diamond lattice. This could yield lasers and modulators that are compatible with conventional silicon chip fabrication [20,[26][27][28][29][30][31][32][33].…”

Influence of plasma power and substrate temperature on structure of nanocrystalline germanium carbon thin films by VHF plasma CVD

“…nc-Ge 1Àx C x :H has a high absorption coefficient like Ge and its band-gap can be controlled by changing the carbon concentration [1][2][3]. In our previous work, we reported the deposition, electrical and optical properties of nc-Ge 1Àx C x :H by hot wire chemical vapor deposition technique [3,4].…”