Influence of plasma power and substrate temperature on structure of nanocrystalline germanium carbon thin films by VHF plasma CVD

The Role of Au in the Thermoelectric Properties of Amorphous Ge/Au and Si/Au Thin Films

“…The profile of as-deposited Ge/Au (0/4.8/0.2) had a broad shoulder at 270 cm À1 , which could be assigned to GeÀGe bonds in the amorphous phase. 18 On the other hand, the profile of the as-deposited sample (0/4.6/0.4) showed a small but apparent peak near 292 cm À1 . Therefore, even without annealing, the recrystallization process could be advanced.…”

“…All four profiles of both annealed samples, (0/4.8/0.2) and (0/4.6/0.4), had almost the same shape, which was centered at 302 cm À1 and had no shoulder. The peak at 302 cm À1 was assigned to crystalline Ge, 18 and there was almost no amorphous phase present. Figure 7 shows the annealing temperature dependence of the absolute value of the thermoelectric power at room temperature.…”

Influence of annealing temperature and Au concentration on the electrical properties of multilayered a-Ge/Au films

“…In the Raman spectra, the broad peak and sharp peak are obtained at around 275 and around 297 cm − 1 , respectively. The broad peak was assigned to amorphous Ge-Ge TO mode peak and the sharp peak was assigned to crystalline Ge-Ge TO mode peak [14]. Crystalline volume fraction (X c ) of films was obtained by using Gaussian fitting from Raman spectra.…”

Electronic and optical properties of zinc-blende GeC by first principles study

“…[1][2][3] Moreover, Ge 1−x C x double-layer deposited on ZnS infrared window can be served as an effective antireflection and protection coating. 4,5 Some breakthroughs have been made in the synthesis of germanium carbides for the past decades in spite of the extremely low solubility (10 8 cm −3 ) of carbon in bulk germanium under equilibrium conditions.…”