Fabrication and Optical Properties of Erbium‐Doped Germanium Nanowires

Abstract

and the cone angle is 0.0999 rad) was used to measure the dynamic modulus of the hydrogels as a function of frequency in the range from 0.2 to 100 Hz. The gap opening at the apex of the cone and plate was set to 0.0483 mm, and the strain amplitude was fixed at 2 % as this amplitude has been found to be well within the linear strain amplitude response regime.

Ge Nanowire Synthesis for Chip-Specific Application

“…In and Sb, wvith acceptor and donor property, respectively, conld potentially be served as the dopant sources for nanowires. [20]. The Bohr radius of Ge (24.3nm) is larger than that ofRCaliona N SAnt Cruz.…”

“…The low solid solnbility of Ge in both metals may decrease the time needed to reach sper-saturation anid facilitate nanowire axial groxvth. Ge nanoxwires were reportedly doped in sitn by incorporating highi toxic gas-phase diborane and phosphine dnraing the CVD nanowire growth [6,20]. In and Sb, wvith acceptor and donor property, respectively, conld potentially be served as the dopant sources for nanowires.…”

Integration of Erbium‐Doped Lithium Niobate Microtubes into Ordered Macroporous Silicon

“…For example, as-grown silicon [8] and germanium [9] nanowires have been exposed to a volatile erbium compound. The challenge remains to control the doping level and to integrate Er 3+ -doped 1D…”

Synthetic and spectroscopic studies of vanadate glaserites II: Photoluminescence studies of Ln:K3Y(VO4)2 (Ln=Eu, Er, Sm, Ho, or Tm)

“…Currently, thulium doped metal oxides such as Y2O3, SrHfO3, and Y3GaO6 are potential alternatives to replace the presently used sulfides [15,20]. On the other hand, Er-doped materials have been studied as a green phosphor and have found further application in optical telecommunications systems because of their eyesafe emission around 1.53µm in the IR region [21,22]. Moreover, Eu 3+ and Sm 3+ doped oxides have also found application as sources of red phosphors [23].…”