Growth of GaxIn1−xAs/InP thin layer structures by chemical beam epitaxy

Leys, Maarten; Rongen, R.T.H.; Hopkins, Jesse B.; Vonk, H.; Es, C.M. van; Wolter, J.H.; Tichelaar, F.D.

doi:10.1016/0022-0248(95)80286-l

Cited by 9 publications

(6 citation statements)

References 10 publications

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“…the atomic configuration of the four bonds of the intermediate group III layer. This is not the same as was proposed previously, in [14], but this difference will be discussed later.…”

Section: Structure Analysis By Hr-xrdsupporting

confidence: 42%

“…There is, of course, some amount of arbitrariness in the choice of the composition of the well and the two interfaces. Choosing as bottom interface one monolayer of InAs and as top interface one monolayer of lattice-matched quaternary material, as done in [14], supplies the same value of x in the quantum well as the arrangement of one monolayer of InAs 0.5 P 0.5 at both interfaces does in the present paper. But to clearly resolve differences on this level, samples are required in which particularly the higher (>2) order satellite intensity distributions can be analysed from HR-XRD spectra combined with simulations using dynamical diffraction theory.…”

Section: Final Remarks/conclusionmentioning

confidence: 95%

“…Both arsine and phosphine are introduced through a hightemperature (HT) cracker. Since the studies presented in [14], new, high-conductance injectors were installed in our system. This required new optimization studies on the 'optimal' GIS.…”

Section: Growthmentioning

confidence: 99%

“…This required new optimization studies on the 'optimal' GIS. The notation we use in the present paper to describe the GIS is similar to that used in [14] and e.g. [5].…”

Section: Growthmentioning

confidence: 99%

See 3 more Smart Citations

Complete optimisation of an electron-beam-pumped Xe laser emitting at 1.73, 2.03, 2.65, 2.63, 3.37, and 3.51 μm

Karelin

Simakova

2004

Quantum Electron.

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In this study the control of interfacial layers in nanometre thin Ga x In 1−x As/InP heterostructures is demonstrated by variation of the growth interruption sequence (GIS) at the binary-ternary interfaces. All samples have been prepared by chemical beam epitaxy simultaneously growing the structures on exact (100) substrates and (100) substrates misoriented by 2 • towards (110). Characterization was by means of photoluminescence (PL) spectroscopy and high-resolution x-ray diffraction. It is shown that both composition and thickness of the interfacial layers can be manipulated on the (sub)monolayer scale with GIS times of the order of seconds. According to analysis of the x-ray data, interfaces can be tuned from +4 × 10 −3 compression to −4 × 10 −3 tension around nominally lattice-matched Ga x In 1−x As quantum wells of six monolayers thick. The PL investigations show that the tensile Ga x In 1−x P interfaces have no effect on the position of the PL peak maximum whereas compressive, InAs-like interfaces shift the transition to lower energy. This trend can be qualitatively understood but for all samples the calculated transition energies are higher than the measured values. Recommendations are given for further work which is not only of importance to the InP/Ga x In 1−x As system but should be applicable to quantum well structures in other materials where heterojunctions involve changes in both the group V and group III sublattices.

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“…the atomic configuration of the four bonds of the intermediate group III layer. This is not the same as was proposed previously, in [14], but this difference will be discussed later.…”

Section: Structure Analysis By Hr-xrdsupporting

confidence: 42%

Section: Final Remarks/conclusionmentioning

confidence: 95%

Section: Growthmentioning

confidence: 99%

“…This required new optimization studies on the 'optimal' GIS. The notation we use in the present paper to describe the GIS is similar to that used in [14] and e.g. [5].…”

Section: Growthmentioning

confidence: 99%

See 2 more Smart Citations

Complete optimisation of an electron-beam-pumped Xe laser emitting at 1.73, 2.03, 2.65, 2.63, 3.37, and 3.51 μm

Karelin

Simakova

2004

Quantum Electron.

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“…Each MQW period consisted of a nominally lattice-matched GaInAs layer (x Ga ϭ0.468) and an InP layer with different thickness separated by interfacial layers on both sides of the GaInAs layers due to the switching sequence during CBE growth. 13,14 The growth interruption sequence ͑GIS͒ between the respective GaInAs and InP layers was chosen in the following way: After growth of InP the surface was smoothened under cracked PH 3 for a time t 1 . Then the InP surface was exposed to cracked AsH 3 for a time t 2 ϭ1 s prior to the growth of GaInAs, during which substitution of phosphorus by arsenic takes place.…”

Section: Methodsmentioning

confidence: 99%

X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells

Marschner

Brubach

Verschuren

et al. 1998

Journal of Applied Physics

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We present x-ray diffraction (XRD) investigations of the structure of nominally lattice-matched GaInAs/InP multiple quantum well (MQW) structures grown by chemical beam epitaxy (CBE). To obtain information about the individual MQW layers and the interface structure we make use of the x-ray interference effect between two layers of equal lattice constant but different layer thickness separated by ultrathin strained (interfacial) layers. This effect predicted by the dynamical diffraction theory provides a powerful tool to quantitatively investigate ultrathin single quantum well structures and monolayer thin interfaces as well as MQW structures. For a given switching sequence during CBE growth, we determine the interface structure of GaInAs/InP MQW structures within the limits given by XRD theory. Additionally we found that an As gradient from the GaInAs quantum well layers into the InP barrier layers is present. The influence of the substrate off-orientation, the growth rate, and the group V flux in the InP barriers on the total amount of strain incorporated into the InP layers is shown. The obtained results indicate that the mechanism of As incorporation into InP layers is similar to the mechanism observed for the As incorporation into (qua)ternary GaxIn1−xAsyP1−y layers.

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