Growth of Epitaxial Gan Films Using Zno Buffer Layer by Pulsed Laser Deposition

Abstract

GaN films and ZnO buffer layers have been deposited on c-cut sapphire substrates by pulsed laser deposition (PLD) employing a KrF laser (X = 248 nm). The influence of the deposition parameters, such as substrate temperature and gas pressure during growth, have been studied. GaN films grown above 700 "C are single crystalline and the full width of half-maximum (FWHM) of the GaN (0002) peak decreases to 0.37' as the growth temperature increases to 800 *C. The optimum growth pressure for GaN is determined to be 0.01 torr N 2 . The optical transmission below the bandgap of the GaN film grown at this pressure is over 85%.

LP MOVPE growth and characterization of high Al content AlxGa1−xN epilayers

“…For AlGaN alloys, the growth temperature is known to be higher than that of GaN [11]. At higher growth temperature, the crystalline quality and surface roughness of these films can be improved [12].…”