Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhien; Li, Guoqiang

doi:10.1016/j.apsusc.2016.02.044

Cited by 18 publications

(2 citation statements)

References 60 publications

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“…This can be due to the rapid release of stress in the nucleation of GaN films during the initial growth by high-temperature (1000 • C) PLD. This observed result is also consistent with those reported by Wang et al [37]. Sample D had minimum stress, likely caused by the growth of polygonal island structures and defects generated in the films, which is consistent with the SEM results [38].…”

Section: Resultssupporting

confidence: 93%

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

et al. 2017

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Approximately 4-µm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111), and Si(100) substrates by high-temperature pulsed laser deposition (PLD). The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD), photoluminescence (PL), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111), and Si(100) exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100) substrate due to the highly directional energetic precursor migration on the substrate's surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 • C) operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga-Si) etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices.

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Section: Resultssupporting

confidence: 93%

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

et al. 2017

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“…Currently, the exploitation of full-color display GaN based LED and white LED products are the research and development hot spot in global semiconductor, which also have become the most important application field. GaN based materials are mostly prepared on Sic, Si and sapphire single crystal substrates, and which have been greatly investigated for their application in LED, laser diodes (LD) and photo-detectors [6][7][8][9][10][11][12][13]. Due to wide band-gap and some excellent properties, such as good mobility, high saturated drift velocity, high mechanical and thermal stability and high transparency, and the GaN films for its alloys are also useful for fabricating high-efficiency soar cells.…”

Section: Introductionmentioning

confidence: 99%

Effect of Nitridation Properties for High Quality GaN Deposition on Amorhpous Quartz Glass at Low Temperature via ECR-PEMOCVD

Zhang¹,

Ju²,

Li³

et al. 2017

IJCA

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GaN-based solar cells fabricating greatly depends on the using of cheap substrate and the high quality of the as-grown GaN films. The high c-axis preferred orientation GaN films were prepared on amorphous quartz glass substrate using self developed electron cyclotron resonance plasma enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system. The properties of the GaN films were characterized by in situ Reflection High Energy Electron Diffraction (RHEED), X-ray diffraction (XRD), Transmission Spectra and photo-luminescence (PL) spectra. The results show that concentric diffraction RHEED rings demonstrated the successful nitriding of conventional amorhpous quartz glass substrates at low temperature of the 430℃, and the temperature is far below the strain point of glass. And the nitridation with as-grown GaN films deposition exhibited stronger c-axis orientation

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2D AlN Layers Sandwiched Between Graphene and Si Substrates

Wang

Zheng

et al. 2018

Advanced Materials

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As group III-nitride semiconductors are thinned to only a few atomic layers, regarding as 2D materials, it would lead to an ultrawide bandgap (E g ) due to the quantum confinement effect, [11,12] which can be used as ultraviolet optoelectronic devices needed ultrawide E g semiconductors. [13,14] Moreover, 2D group III-nitride semiconductors showing anomalously temperature-dependent thermal conductivity and orbitally driven ultra-low thermal conductivity have been predicted, [15,16] which make them prospective for applications in energy conversion, for example, thermos-electrics. [17] However, the experimental synthesis of 2D group III-nitride semiconductors is still meeting with tremendous difficulties due to the fact that group III-nitride semiconductors more easily orientate along c-axis than any other axis [18] and the lateral mobility for precursor atoms of group III-nitride materials, i.e., AlN, is very low, [19] which result in the formation of 3D crystal structure. Moreover, the surface energy constraint and large lattice mismatch between group III-nitride semiconductors and substrates would also lead to the formation of 3D island crystal. [11] In this work, we have successfully realized the epitaxial growth of 2D AlN layers sandwiched between graphene and Si substrates for the first time in the world by metal organic chemical vapor deposition (MOCVD). On the one hand, Si (111) surface with high symmetry [20] has stable adsorption sites for Al and N adatoms, Figure S1 in the Supporting Information. On the other hand, Si has a lattice mismatch with AlN(0001) of ≈19%, [21] Figure S2 in the Supporting Information, producing the tensile stress together with the effect of Gibbs free energy that drive the crystal structure of 2D AlN transforming from R3m structure to P6 3 MC structure. [22][23][24] During the growth process, hydrogenation for graphene/Si hetero-structures with hydrogen (H 2 ) guarantees the formation of 2D AlN layers. The 2D AlN layers are sandwiched between graphene and Si substrates after hydrogenation, while no interlayer can be found between graphene and Si substrates without hydrogenation. To further study the formation mechanism of 2D AlN layers and the effect of hydrogenation on the formation of 2D AlN layers, theoretical calculations with first-principles calculations based on density functional theory (DFT) have been carried out. We further predicted and determined the E g of the 2D AlN layers theoretically and experimentally by Hartree-Fock local density

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Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

Cited by 18 publications

References 60 publications

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

Effect of Nitridation Properties for High Quality GaN Deposition on Amorhpous Quartz Glass at Low Temperature via ECR-PEMOCVD

2D AlN Layers Sandwiched Between Graphene and Si Substrates

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