GaN-based solar cells fabricating greatly depends on the using of cheap substrate and the high quality of the as-grown GaN films. The high c-axis preferred orientation GaN films were prepared on amorphous quartz glass substrate using self developed electron cyclotron resonance plasma enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system. The properties of the GaN films were characterized by in situ Reflection High Energy Electron Diffraction (RHEED), X-ray diffraction (XRD), Transmission Spectra and photo-luminescence (PL) spectra. The results show that concentric diffraction RHEED rings demonstrated the successful nitriding of conventional amorhpous quartz glass substrates at low temperature of the 430℃, and the temperature is far below the strain point of glass. And the nitridation with as-grown GaN films deposition exhibited stronger c-axis orientation
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