Growth of AlN by pulsed and conventional MOVPE

Kröncke, Hanno; Figge, S.; Aschenbrenner, T.; Hommel, D.

doi:10.1016/j.jcrysgro.2013.06.038

Cited by 15 publications

(14 citation statements)

References 27 publications

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“…Growth of high-quality AlN single crystal is a challenging task. Epitaxial film can be grown by MBE 4,5) and metal organic chemical vapor deposition, 6,7) while largediameter bulk growth can be achieved using hydride vapor phase epitaxy (HVPE) 8,9) or physical vapor transport (PVT). [10][11][12][13] Recently, annealing of AlN templates grown by sputtering [14][15][16] has been reported as a potential technique for obtaining high-quality AlN substrates.…”

Section: Introductionmentioning

confidence: 99%

Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography

Yao

Sugawara

Ishikawa

et al. 2019

Jpn. J. Appl. Phys.

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Dislocations in a single-crystal aluminum nitride bulk substrate have been characterized using synchrotron X-ray topography (XRT). Threading edge dislocations (TEDs) and screw-type dislocations as well as {0001}-plane basal plane dislocations have been observed, and their Burgers vectors were evaluated based on the XRT contrast of these dislocations. Particular attention has been paid to the direction of the Burgers vectors of dislocation arrays composed of TEDs. By analyzing the bright/dark contrast change of these TED arrays when all six different g-vectors (equivalent to g = 11-26) were applied, the directions of the a-axis components of Burgers vectors were determined.

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Section: Introductionmentioning

confidence: 99%

Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography

Yao

Sugawara

Ishikawa

et al. 2019

Jpn. J. Appl. Phys.

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“…[1][2][3] It is one of the promising materials for use as the substrate of AlGaN-based deep-ultraviolet light-emitting diodes (UV-LEDs), and surface acoustic wave (SAW) devices. AlN has been fabricated by various methods, including metal-organic vapor phase epitaxy (MOVPE), [4][5][6] molecular beam epitaxy (MBE), 7,8) hydride vapor phase epitaxy (HVPE), 9,10) and pulsed laser deposition (PLD), 11) on several kinds of substrates such as Si, SiC, and sapphire. The crystalline quality of AlN fabricated using these methods is improving.…”

Section: Introductionmentioning

confidence: 99%

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

Ohtsuka

Takeuchi

Fukuyama

2016

Jpn. J. Appl. Phys.

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Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

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“…Even though AlN is often used as buffer layer for the growth of GaN on Si or for far ultraviolet devices, nothing has been reported on (0001) AlN surface reconstructions in MOVPE. However, there are indirect hints to a surface transition on (0001) AlN depending on the V/III ratio which alters in the coalescence behavior and buffer nucleation . The growth temperature can also enhance or inhibit step‐bunching , and step‐bunching with increasing misorientation sets in abruptly .…”

Section: Introductionmentioning

confidence: 99%

Surface reconstructions of (0001) AlN during metal‐organic vapor phase epitaxy

Pristovsek

Bellman

Mehnke

et al. 2017

Physica Status Solidi (b)

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We observed (0001) AlN wurzite surfaces by atomic force microscopy after 500 nm regrowth in metal‐organic vapor phase epitaxy. The steps changed from double to single height with decreasing V/III ratio. The single height step edges were alternating smooth and rough due to the two different step types on (0001) wurzite surfaces. By reducing the V/III ratio, the widths equalize for terraces with smooth and rough edges, until Al terminated steps start to dominate, and thus promote again double height steps. Using in situ ellipsometry at λ=400nm under static conditions, we could directly identify three different surface reconstructions at high NH3, low NH3, and without NH3 which correlates with the different step terminations.

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Growth of AlN by pulsed and conventional MOVPE

Cited by 15 publications

References 27 publications

Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography

Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

Surface reconstructions of (0001) AlN during metal‐organic vapor phase epitaxy

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