Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

Mutations in isocitrate dehydrogenase (IDH), a key enzyme in the tricarboxylic acid cycle, have recently been found in ~75% glioma and ~20% acute myeloid leukemia. Different from the wild-type enzyme, mutant IDH1 catalyzes the reduction of α-ketoglutaric acid to D-2-hydroxyglutaric acid. Strong evidence has shown mutant IDH1 represents a novel target for this type of cancer. We found two 1-hydroxypyridin-2-one compounds that are potent inhibitors of R132H and R132C IDH1 mutants with Ki values as low as 120 nM. These compounds exhibit >60-fold selectivity against wild-type IDH1 and can inhibit the production of D-2-hydroxyglutaric acid in IDH1 mutated cells, representing novel chemical probes for cancer biology studies. We also report the first inhibitor-bound crystal structures of IDH1(R132H), showing these inhibitors have H-bond, electrostatic and hydrophobic interactions with the mutant enzyme. Comparison with the substrate-bound IDH1 structures revealed the structural basis for the high enzyme selectivity of these compounds.

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The expansion behavior of a single Shockley stacking fault (SSSF) originating from a basal plane dislocation in a 4H-SiC epitaxial layer on the (112¯0) a-plane under electron beam (EB) (//[112¯0]) irradiation was observed. The width of the SSSF was proportional to the EB current. EB irradiation at a fixed spot outside an SSSF can expand the SSSF as effectively as direct SSSF irradiation. It was found that the selective excitation of an SSSF and/or a Si-core partial dislocation (PD) is possible by appropriately setting the EB irradiation position because the cathodoluminescence spectrum varies with the irradiation position around an SSSF. The rate of SSSF expansion upon the indirect excitation of a Si-core PD is much larger than that upon direct SSSF excitation. However, the expansion rate under both indirect SSSF excitation and indirect Si-core PD excitation is smaller than that under indirect Si-core excitation. The C-core PD became mobile after supplying a threshold number of electron-hole pairs.

In considering a novel function in ferromagnetic tunnel junctions consisting of ferromagnet (FM)/barrier/FM junctions, we have theoretically investigated the multiple-valued (or multi-level) cell property, which is in principle realized by sensing the conductances of four states recorded with magnetization configurations of two FMs; that is, (up, up), (up, down), (down, up), (down, down). To obtain such 4-valued conductances, we propose FM1/spin-polarized barrier/FM2 junctions, where FM1 and FM2 are different ferromagnets, and the barrier has spin dependence. The proposed idea is applied to the case of the barrier having localized spins. Assuming that all the localized spins are pinned parallel to the magnetization axes of FM1 and FM2, 4-valued conductances are explicitly obtained for the case of many localized spins. Furthermore, objectives for an ideal spin-polarized barrier are discussed.