Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hidetoshi

doi:10.7567/jjap.55.05fd08

Cited by 19 publications

(11 citation statements)

References 30 publications

(47 reference statements)

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“…It was also reported that when the sputtering pressure increased, the collision between sputtering particles and Ar ions led to the formation of AlN (100) films [ 64 ]. Both observations have been reported by many researchers in Table 2 such as in references [ 17 , 22 , 28 , 35 , 39 , 41 , 45 ].…”

Section: Compilation Of Recipes and The Roles Of The Sputtering Pasupporting

confidence: 72%

“…For each parameter, selected works that investigate its effect will be mentioned. In addition to using the works that were already summarized in Table 2 , i.e., references [ 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 ], we also highlight additional articles that are not included in that table i.e., references [ 63 , 64 , 65 , 66 , 67 , 68 , 69 , …”

Section: Compilation Of Recipes and The Roles Of The Sputtering Pamentioning

confidence: 99%

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Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Iqbal

Mohd-Yasin

2018

Sensors

135

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We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is collated from the analysis of around 80 journal articles that sputtered this film on variety of substrate materials, processes and equipment. This review will be a good starting point to catch up with the state-of-the-arts research on the reactive sputtering of AlN (002) thin film, as well as its evolving list of piezoelectric applications such as energy harvesters.

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Section: Compilation Of Recipes and The Roles Of The Sputtering Pasupporting

confidence: 72%

Section: Compilation Of Recipes and The Roles Of The Sputtering Pamentioning

confidence: 99%

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Iqbal

Mohd-Yasin

2018

Sensors

135

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“…Thus, facilitating the growth of highly c-axis AlN thin-film. The target to substrate distance at 120 mm considered far enough and not favourable to the growth of c-axis AlN thin-film as most reports work on much smaller distance target to the substrate (Yang et al , 2014; Stan et al , 2015; Zhang et al , 2015; Ohtsuka, Takeuchi and Fukuyama, 2016). As the mean free path is longer, the collision between sputter particles has lower energy and not favourable for c-axis growth.…”

Section: Resultsmentioning

confidence: 99%

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Azman

Nayan

Hasnan

et al. 2021

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PurposeThis study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique. Design/methodology/approachHiPIMS system was used to deposit AlN thin film at a low output power of 200 W. The ramping temperature was introduced to substrate from room temperature to maximum 100°Cat the initial deposition of thin-film, and the result was compared to thin-film sputtered with no additional heat. For the heat assistance AlN deposition, the substrate was let to cool down to room temperature for the remaining deposition time. The thin-films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) while the MIS Schottky diode characteristic investigated through current-voltage response by a two-point probe method. FindingsThe XRD pattern shows significant improvement of the strong peak of the c-axis (002) preferred orientation of the AlN thin-film. The peak was observed narrowed with temperature assisted where FWHM calculated at 0.35° compared to FWHM of AlN thin film deposited at room temperature at around 0.59°. The degree of crystallinity of bulk thin film was improved by 28% with temperature assisted. The AFM images show significant improvement as low surface roughness achieved at around 0.7 nm for temperature assisted sample compares to 3 nm with no heat applied. Originality/valueThe small amount of heat introduced to the substrate has significantly improved the growth of the c-axis AlN thin film, and this method is favorable in the deposition of the high-quality thin film at the low-temperature process.

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“…9,10 We have investigated the effect of sputtering pressure on the crystalline quality and residual stress of AlN films deposited on the nitrided a-plane sapphire substrates at 823 K in an Ar-50 vol%N 2 gas mixture using 800 W pulsed DC sputtering. 11 We show that the optimized sputtering condition was achieved at total pressures (P total ) of 0.4-0.6 Pa. However, the polarity of AlN sputtered films was still nitrogen (c)-polar, which follows the polarity of the nitrided layer of the sapphire.…”

Section: Introductionmentioning

confidence: 88%

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

2018

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ARTICLES YOU MAY BE INTERESTED INThe effect of oxygen partial pressure (P O 2 ) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (c)-polarity to aluminum (+c)-polarity occurred during growth at a high P O 2 of 9.4×10 3 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high P O 2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high P O 2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high P O 2 , the full width at half-maximum values of the AlN (0002) and (1012) X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

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Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

Cited by 19 publications

References 30 publications

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

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