Growth and Properties of Nanofilms Produced by the Thermal Oxidation of MnO2/InP under the Effect of Mn3(PO4)2

Mittova, I. Ya.; Сладкопевцев, Б. В.; Samsonov, A. A.; Томина, Е. В.; Andreenko, S. Yu.; Kostenko, P.

doi:10.1134/s0020168519090073

Cited by 3 publications

(1 citation statement)

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“…The thermodynamic calculation of the corresponding reactions using data [17] shows that SnO 2 can theoretically transfer oxygen to the InP components, in other words it is a chemical stimulator of the semiconductor thermal oxidation [18]. Good reconcilability of oxide components, in particular, during the formation of ITO films, can serve as the basis for the modifying effect of tin dioxide [19] on the structure and electrophysical properties of thermal oxide films on InP. Accordingly, the purpose of this study was establishment of the effect of SnO 2 as a possible chemostimulator and modifier of the structure and properties of nanoscale films grown by InP thermal oxidation.…”

Section: Introductionmentioning

confidence: 99%

Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide

Mittova¹,

Kostryukov²,

Ilyasova³

et al. 2020

Nanosystems: Phys. Chem. Math.

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The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO 2 /InP heterostructures (thickness of SnO 2 layer ∼ 50 nm). It was established that SnO 2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO 2 provides the formation of nanoscale films with semiconductor properties.

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Section: Introductionmentioning

confidence: 99%