Thermal Oxidation of a Single-Crystal GaAs Surface Treated in Sulfur Vapor

Study and characterization of the nanotextured Ga2O3-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

“…In order to address the drawbacks of the TO process and to improve the oxygen incorporation without multiphasic formation, the wet TO of GaAs was demonstrated to grow amorphous and homogenous oxide films on GaAs with a growth temperature of 420 • C [24]. Nanotexturing of the samples by TO and As sublimation has been used by other approaches, such as surface modification by sulfur-vapor, resulting in sulfide formation, forming dielectric films instead of semiconducting [25]. In general, the obtention of Ga 2 O 3 -based thin films by oxidation of substrates via thermal processing resulted in the exploration of a patterned technique, which could be applied to prepare patterned β-Ga 2 O 3 with applications in photodetector devices with UV photoresponse [26].…”