Growth and characterization of single InGaN quantum well in nonpolar a-plane <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>11</mml:mn><mml:mrow><mml:mover accent="true"><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover></mml:mrow><mml:mn>0</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math> InGaN/GaN light-emitting diodes

Bang, Kyuhyun; Jung, Sukkoo; Baik, Kwang Hyeon; Myoung, Jae Min

doi:10.1016/j.cap.2017.03.016

Cited by 2 publications

(1 citation statement)

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“…Here, the growth rate on the polar facet is much higher than on the non-polar one, which was observed also by TEM of fin LEDs. Additionally, the Indium incorporation efficiency is almost doubled on c-planes in comparison to a-planes [34]. Both effects lead to much stronger trapping of In-containing species at the top facets of fins.…”

Section: Fin Ledmentioning

confidence: 99%

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

Hartmann

Steib

Zhou

et al. 2017

Journal of Crystal Growth

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GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar {11-20} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2temperature-step-grown fin LED are demonstrated.

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Section: Fin Ledmentioning

confidence: 99%