Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures

García, Virgilio Bocanegra; Hernández-Vázquez, O.; García-Hernández, S.A.; Luna, E.; Vidal, M. A.

doi:10.1016/j.mssp.2020.105101

Cited by 2 publications

(2 citation statements)

References 26 publications

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“…For the cubic phase, reports on the optical properties of bulk c-InxGa1-xN layers with indium contents above x(In) = 0.25 are sparse. In general, our emission peaks appear to be at lower energies than those reported for cubic nanostructures with an equal or higher presumed indium content [13][14][15] . A more detailed analysis of the optical and electrical properties is currently under the way and will follow in a forthcoming publication.…”

Section: Resultscontrasting

confidence: 57%

Growth of cubic InxGa1-xN over whole composition by MBE

Zscherp

Jentsch

Müller

et al. 2023

Gallium Nitride Materials and Devices XVIII

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Cubic InxGa1-xN alloys are a candidate material for optoelectronic applications because they lack internal polarization fields and promise to cover a vast range of emission wavelengths. However, the large discrepancy in interatomic spacing and growth temperatures of c-GaN and c-InN hinder InxGa1-xN-growth. We report cubic InxGa1-xN layers grown by plasmaassisted MBE and achieve continuous miscibility of the indium content x(In) over the whole composition range. X-ray diffraction precisely monitors the composition, phase purity and miscibility of the thin films. Furthermore, we discuss the impact of the indium content on the crystallinity. Complementary, low-temperature photoluminescence studies elucidate the optical response of cubic InxGa1-xN layers.

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Section: Resultscontrasting

confidence: 57%

Growth of cubic InxGa1-xN over whole composition by MBE

Zscherp

Jentsch

Müller

et al. 2023

Gallium Nitride Materials and Devices XVIII

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“…This value is slightly lower than the bowing of the emission energy in hexagonal In x Ga 1– x N ( b ≈ 2.8 eV). , Compared to other cubic In x Ga 1– x N epilayers, the emission energies reported here for low indium content ( x (In) < 0.3) align rather well with other bulk-like thin film samples. ,− For larger alloy compositions (0.3 < x (In) < 0.5), reports on the optical properties of c-In x Ga 1– x N are sparse. We observe emission peaks at significantly lower energies than those of other c-In x Ga 1– x N layers − or multi quantum wells. − The most recent study, ref , determines a significantly smaller bowing of b = 1.4 eV by ellipsometry measurements, which might be caused by the somewhat higher energy values that are measured in the very highly alloyed samples with x (In) > 0.9 and the lack of data for x (In) > 0.5 (see Figure b). The discrepancies may also arise from the fact that our emissions may be caused by recombinations that are localized in the potential valleys of the alloys, which ellipsometry may be less sensitive to.…”

Section: Resultsmentioning

confidence: 62%

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN

Zscherp,

Jentsch,

Müller

et al. 2023

ACS Appl. Mater. Interfaces

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The lack of internal polarization fields in cubic group-III nitrides makes them promising arsenic-free contenders for next-generation high-performance electronic and optoelectronic applications. In particular, cubic In x Ga 1−x N semiconductor alloys promise band gap tuning across and beyond the visible spectrum, from the near-ultraviolet to the near-infrared. However, realization across the complete composition range has been deemed impossible due to a miscibility gap corresponding to the amber spectral range. In this study, we use plasma-assisted molecular beam epitaxy (PAMBE) to fabricate cubic In x Ga 1−x N films on c-GaN/AlN/3C-SiC/Si template substrates that overcome this challenge by careful adjustment of the growth conditions, conclusively closing the miscibility gap. X-ray diffraction reveals the composition, phase purity, and strain properties of the In x Ga 1−x N films. Scanning transmission electron microscopy reveals a CuPt-type ordering on the atomistic scale in highly alloyed films with x(In) ≈ 0.5. Layers with much lower and much higher indium content exhibit statistical distributions of the cations Ga and In. Notably, this CuPt-type ordering results in a spectrally narrower emission compared to that of statistically disordered zincblende materials. The emission energies of the films range from 3.24 to 0.69 eV and feature a quadratic bowing parameter of b = 2.4 eV. In contrast, the LO-like phonon modes that are observed by Raman spectroscopy exhibit a one-mode behavior and shift linearly from c-GaN to c-InN.

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Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures

Cited by 2 publications

References 26 publications

Growth of cubic InxGa1-xN over whole composition by MBE

Growth of cubic InxGa1-xN over whole composition by MBE

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN

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Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures

Cited by 2 publications

References 26 publications

Growth of cubic InxGa1-xN over whole composition by MBE

Growth of cubic InxGa1-xN over whole composition by MBE

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN

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Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN