Growth and characterization of Cu2SnSe3 thin films

Earth-abundant Cu2SnSe3 thin film counter electrode for high-efficiency quantum dot-sensitized solar cells

“…), giving the value of E g ¼~1.25 eV for CTSe thin film. The observed band gap is in a reasonable range of values reported for CTSe [10,55]. It is interesting to note that the band gap of CTSe thin film is smaller than those values of assynthesized CTSe nanocrystals.…”

Multiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence

“…Various CuSn-selenides exist with bandgaps near the energetic region of the observed emissions: an orthorhombic low temperature (<450 C) Cu 2 SnSe 3 phase, 40 a monoclinic Cu 2 SnSe 3 phase with a bandgap of 0.84 eV, 41 a cubic Cu 2 SnSe 4 phase with a bandgap of 1.2 eV, 42 and a cubic Cu 2 SnSe 3 phase. 43 No bandgaps were reported for the cubic and orthorhombic Cu 2 SnSe 3 . The monoclinic Cu 2 SnSe 3 is a candidate to explain the emission at 0.82 eV.…”

Effect of Cu/Sn Concentration Ratio on the Phase Equilibrium-Related Properties of Cu-Sn-S Sprayed Materials

“…These compounds have been prepared by various techniques such as conventional reaction, [8][9][10] solvothermal processes, [1,2,11,12] evaporation, [4,13] and co-evaporation. [13,14] Dry approaches such as spray pyrolysis techniques have not been extensively applied.…”

“…[13,14] Dry approaches such as spray pyrolysis techniques have not been extensively applied. [3,15,16] This technique presents two major advantages, namely (1) low cost and (2) large scale of thin film production.…”