The growth of tin sulfide (SnS) films with large surface area have been accomplished. A uniform nanowall SnS thin film over the entire substrate was achieved by using an economic chemical bath deposition method and observed by scanning electron microscopy. Microstructure, phase confirmation, and optical properties were investigated. X-ray diffraction pattern and transmission electron microscopy revealed that the tin sulfide film by chemical bath deposition exhibited polycrystalline orthorhombic structure. The optical absorption coefficient was high, more than
104cm−1
, which is beneficial for a photovoltaic device. An optical indirect bandgap of SnS film was obtained to be
1.19eV
. The effect of SnS film thickness on bandgap was also investigated. When the thickness was small, in the range of less than
500nm
, the bandgap of SnS film increased with the increase of thickness. When the thickness was large, in the range of more than
500nm
, the bandgap slightly decreased with the increase of thickness. The photoconductivity increased with the increase of film thickness for the nanowall SnS thin films.
CuIn1−xAlxSe2 thin films (x = 0–1.0) were prepared by the four-source co-evaporation technique onto soda lime glass substrates held at 673 K. The films are found to be nearly stoichiometric as determined from Rutherford back scattering (RBS) analysis. Surface analysis of the films was carried out by x-ray photoelectron spectroscopy. X-ray diffraction and scanning electron microscopy are used to examine the structure of the films. The films are found to be single phase and chalcopyrite in structure. The lattice parameters are found to vary nonlinearly with x. Optical absorption studies reveal a three-fold optical band structure and the band gaps are found to increase nonlinearly with the increase in Al content. Crystal field and spin–orbit parameters are determined from the band gaps using a quasi-cubic model. The deformation potential and the percentage of d-orbital contribution to p–d hybridization are determined using the deduced crystal field and spin-orbit parameters. All the films are p-type conducting and the resistivity is found to increase with the increase in Al content. Room temperature Hall mobility and the carrier concentration of the films are determined.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.