Multiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence

Djemour, Rabie; Redinger, Alex; Mousel, Marina; Gütay, Levent; Siebentritt, Susanne

doi:10.1063/1.4892101

Cited by 14 publications

(16 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 2 a shows normalized quantum effi ciency spectra (EQE) comparing several solar cells made from Cu-rich (red and black line) and Cu-poor (blue line) precursors, all etched before annealing. Although the solar cells show slightly different band gaps, which is attributed to different crystal modifi cations of the Cu 2 ZnSnSe 4 , [ 14,15 ] the main observation is that the current is improved for the Cu-rich precursor in agreement with the observed short circuit currents. The improvement is mostly in the long-wavelength region, indicating a better collection near the back of the absorber and thus improved transport properties.…”

Section: Doi: 101002/aenm201300543supporting

confidence: 73%

“…These are attributed to band-band recombination of several crystal modifi cations with slightly different band gaps, most likely stannite and kesterite phases. [ 14,15 ] An additional transition is observed at 1.25 eV. This transition has been previously attributed to a defect related transition in ZnSe, due to resonant defect excitation.…”

Section: Doi: 101002/aenm201300543mentioning

confidence: 73%

See 1 more Smart Citation

Cu‐Rich Precursors Improve Kesterite Solar Cells

Mousel

Schwarz

Djemour

et al. 2013

Advanced Energy Materials

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Doi: 101002/aenm201300543supporting

confidence: 73%

Section: Doi: 101002/aenm201300543mentioning

confidence: 73%

Cu‐Rich Precursors Improve Kesterite Solar Cells

Mousel

Schwarz

Djemour

et al. 2013

Advanced Energy Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…The bright regions in Fig. 8a-c could potentially be an artefact from interference effects [32] which occurs when the CZTS absorber layer acts as a Fabry-Perot etalon, as shown in Fig. 9.…”

Section: Bg Mendis Et Al Solar Energy Materials and Solar Cells 17mentioning

confidence: 99%

Nanometre-scale optical property fluctuations in Cu2ZnSnS4 revealed by low temperature cathodoluminescence

Mendis

Taylor

Guennou

et al. 2018

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

A B S T R A C TBand tailing is a major contributing factor to the large open circuit voltage (V oc ) deficit that is currently limiting Cu 2 ZnSnS 4 (CZTS) photovoltaic devices. It occurs in highly doped, highly compensated semiconductors and gives rise to a non-uniform electronic band structure. Here we report spatially resolved fluctuations in CZTS optical properties using low temperature cathodoluminescence (CL) in a scanning electron microscope (SEM). Principal component analysis reveals three CL peaks whose relative intensity vary across domains~100 nm in size. It is not known whether the non-uniform optical properties are due to changes in composition or due to structural order-disorder at constant composition. Measurement of composition with energy dispersive X-ray (EDX) analysis in an SEM and ordering with Micro-Raman mapping revealed CZTS to be uniform within the spatial resolution (estimated at~0.4 µm and 1.1 µm respectively) and sensitivity of the two techniques. The CL results are consistent with the presence of band tailing in CZTS.

show abstract

“…11 Because of the small energy difference among the polytypes, which is almost linearly and negatively correlated with the band gap, different cation-ordered phases can coexist in these compounds. 10,[12][13][14][15] This large variation of band structure as a function of atomic configuration, therefore, could be one of the reasons for the observed V OC deficit in this system, because the spatial fluctuation of the band edge states can reduce the effective band gap of the solar absorber. 7,[16][17][18] Therefore, the intrinsic properties of the multi-cation semiconductors can have a large influence on the design and device performance of these materials.…”

Section: Introductionmentioning

confidence: 99%

Ordering-induced direct-to-indirect band gap transition in multication semiconductor compounds

et al. 2015

View full text Add to dashboard Cite

Using first-principles calculations and symmetry analysis, we show that as cation atoms in a zincblende-based semiconductor are replaced through atomic mutation (e.g., evolve from ZnSe to CuGaSe 2 to Cu 2 ZnGeSe 4 ), the band gaps of the semiconductors will become more and more indirect because of the band splitting at the zone boundary, and in some cases will even form the segregating states. For example, although ZnSe is a direct band gap semiconductor, quaternary compounds Cu 2 ZnGeSe 4 and Cu 2 ZnSnSe 4 can be indirect band gap semiconductors if they form the primitive mixed CuAu ordered structures. We also find that the stability and the electronic structure of the quaternary polytypes with different atomic ordering are almost negative-linearly correlated. We suggest that these intrinsic properties of the multi-cation semiconductors can have a large influence on the design and device performance of these materials.2

show abstract

Multiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence

Abstract: Articles you may be interested inInvestigation of combinatorial coevaporated thin film Cu2ZnSnS4. I. Temperature effect, crystalline phases, morphology, and photoluminescence

Cited by 14 publications

References 48 publications

Cu‐Rich Precursors Improve Kesterite Solar Cells

Cu‐Rich Precursors Improve Kesterite Solar Cells

Nanometre-scale optical property fluctuations in Cu2ZnSnS4 revealed by low temperature cathodoluminescence

Ordering-induced direct-to-indirect band gap transition in multication semiconductor compounds

Contact Info

Product

Resources

About