Green's function approach for modeling of electrostatic effects in nanoscale fully depleted double‐gate silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

Abstract

Exact solution of two‐dimensional (2D) Poisson's equation for fully depleted double‐gate silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistor is derived using three‐zone Green's function solution technique. Framework consists of consideration of source–drain junction curvature. 2D potential profile obtained forms the basis for estimation of threshold voltage. Temperature dependence of front surface potential distribution, back surface potential distribution and front‐gate threshold voltage are modeled using temperature sensitive parameters. Applying newly developed model, surface potential and threshold voltage sensitivities to gate oxide thickness have been comprehensively investigated. Device simulation is performed using ATLAS 2D (SILVACO, 4701 Patrick Henry Drive, Bldg. Santa Clara, CA 95054 USA) device simulator, and the results obtained are compared with the proposed 2D model. The model results are found to be in good agreement with the simulated data. Copyright © 2013 John Wiley & Sons, Ltd.

New analytical models of subthreshold surface potential and subthreshold current of fully depleted short-channel silicon-on-insulator MOSFETs with halo or pocket implantation

“…An analytical model of FD SOI MOSFETs has already been used by numerous authors. [17][18][19][20][21][22][23][24][25][26] Among them, several analytical models have been developed [17][18][19] on the basis of the concept of a 2D charge-sharing scheme between the gate and source/ drain regions to develop a threshold-voltage model of current-voltage (I-V) characteristics. However, the scheme of charge sharing is less or more arbitrary and oversimplified, and leads to an underestimated threshold voltage roll-off.…”