New analytical models of subthreshold surface potential and subthreshold current of fully depleted short-channel silicon-on-insulator MOSFETs with halo or pocket implantation
Abstract:New analytical models of the subthreshold surface potential, threshold voltage and subthreshold current of fully depleted (FD) silicon on insulator MOSFETs with halo or pocket implants are presented. The subthreshold surface potential model is based on the solutions of the quasi-two-dimensional (2D) Poisson’s equation, which rigorously satisfy the boundary conditions of the continuity of the potential and electric field in the lateral direction along the channel surface of halo MOS transistors. Closed-form mod… Show more
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