A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Jiang, Chunsheng; Wang, Jing; Xu, Jun

doi:10.1109/icsict.2014.7021524

Cited by 1 publication

(2 citation statements)

References 7 publications

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“…In the case of JLDG MOSFET, as shown in Jiang et al's method, the potential distribution can be obtained as follows [10].…”

Section: Potential Distribution Of Jldg Mosfetmentioning

confidence: 99%

“…Raksharam et al described the change in the threshold voltage for a JLDG MOSFET with a channel length of 22 nm as an analytical threshold voltage model [9]. Jiang et al defined the threshold voltage using the potential distribution of the series form and expressed analytically the change of threshold voltage due to drain voltage [10]. In addition, Lin et al obtained the potential distribution by solving the one-dimensional Poisson equation and the two-dimensional Laplace equation, and calculated the threshold voltages for JLDG MOSFETs with channel lengths of 20 nm or more [11].…”

Section: Introductionmentioning

confidence: 99%

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Spice Model of Drain Induced Barrier Lowering in Symmetric Junctionless Double Gate Mosfet

Jung¹

2019

GEOMATE

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A SPICE model of Drain Induced Barrier Lowering (DIBL) has been proposed for a symmetric junctionless double gate (JLDG) MOSFET. For this purpose, the potential distribution in the channel is obtained using the Poisson equation, and the threshold voltage is determined by the third derivative (TD) method. The SPICE model of DIBL should be expressed as a function of silicon thickness tsi as well as channel length Lg, oxide thickness tox, and SPICE parameter η such as σD=AηLg -3 tsi 2 tox due to the effect of silicon thickness on carrier transport in a nanostructure JLDG MOSFET, even though it is only defined by channel length and oxide thickness in SPICE model of conventional MOSFET. As a result, it is found that the proportional constant A is 22.0 and the static feedback coefficient η is reasonably between 0.2 and 0.9. The DIBLs obtained by using the threshold voltage model published in other papers show a good agreement with those of this model regardless of the channel length at 20 nm or more, but the DIBLs of the other models are different at the sub-20 nm channel lengths from one another due to approximations of each other. Also we show that the DIBL for JLDG MOSFET is smaller than junction-based double gate MOSFET.

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“…In the case of JLDG MOSFET, as shown in Jiang et al's method, the potential distribution can be obtained as follows [10].…”

Section: Potential Distribution Of Jldg Mosfetmentioning

confidence: 99%