Green II–VI light emitting diodes with long lifetime on InP substrate

Abstract

We demonstrate that the quaternary compound ZnMgSeTe can be grown by molecular beam epitaxy in reasonable quality. For layers with energy gaps as high as 3.1 eV, nitrogen doping leads to free hole concentrations around 1018 cm−3. In combination with n-ZnMgCdSe, this material allows the fabrication of II–VI diodes lattice matched to InP substrate. Light emitting diodes containing a tensile strained ZnCdSe quantum well in ZnMgCdSe emit green light when operated in forward direction. In contrast to diodes with a comparable density of extended defects grown on GaAs substrate, these diodes show no formation of dark line defects and a lifetime which is about three orders of magnitude longer.

Cross-sectional scanning tunneling microscopy study on II–VI multilayer structures

“…For example, the blue/green wavelength region is relatively simple to access with II-VI materials. [1][2][3] Another interesting property of II-VI compounds is that magnetization can be introduced ͓by doping with manganese ͑Mn͒ for instance͔ without creating extra charge carriers. With respect to future information technologies, recently, it has been shown that single magnetic atoms can be inserted into self-assembled II-VI quantum dots ͑QDs͒.…”

Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

“…Up to now, some groups have reported the MgZnCdSe-based light emitters on InP [30,33,35,[46][47][48][49]. However, no lasing operation under the current injection scheme has been successful to date.…”

Effects of Electric Fields on Cathodoluminescence from II-VI Quantum Well Light Emitting Diodes

“…QW structures based on these materials exhibit excellent optical characteristics with very strong luminescence intensity and quantum confinement [4][5]. These diodes show no formation of dark line defects and have lifetimes about three orders of magnitude longer [6,7] than diodes with a comparable density of extended defects grown on GaAs substrates.…”