We have developed a surface conduction electron emitter (SCE) for next-generation flat displays. PdO thin films (approximately 10 nm) produced by the ink-jet process were used for forming the surface conduction electron emitter. The films were electroformed and activated while a certain voltage was applied, and an electron emitter with good characteristics was obtained. A current density of approximately 30 mA/cm 2 was attained when an anode voltage of 10 kV was applied. We confirmed operation for 60,000 hours by an acceleration test at a current density of 3 mA/cm 2 . This current density is required for "good brightness" on the surface conduction electron emitter display (SED).• SID 05 DIGEST

Abstract— A 10‐in. flat‐panel display (FPD) with surface‐conduction electron‐emitter (SCE) cathodes can be fabricated through a printing process. Ultrafine particle films of the SCEs are deposited by using ink‐jet printing. A prototype achieves full‐color and full‐motion pictures comparable to CRTs. The feasibility of larger and low‐cost SCE displays has been confirmed.

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Yellow-green (560 nm) II-VI laser diodes on InP substrates were successfully operated under the pulsed current injection at 77 K. A separate confinement heterostructure was formed by employing MgSe/BeZnTe:N superlattices (SL) as p-cladding layers and MgSe/ZnCdSe:Cl SL as n-cladding layers. The threshold current density was about 2.5 kA/cm2.

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Abstract— A surface‐conduction electron emitter (SCE) for next‐generation flat‐panel displays has been developed. PdO thin films (approximately 10 nm thick) produced by an ink‐jet process were used to form the surface‐conduction electron emitter. The films were electroformed and activated while a voltage was applied, and an electron emitter with good characteristics was obtained. A current density of approximately 30 mA/cm2 was attained when an anode voltage of 10 kV was applied. Furthermore, a 36‐in. surface‐conduction electron‐emitter display (SED), consisting of SCEs and a phosphor screen similar to that of a CRT, was also developed.

Multiquantum barriers (MQBs) were introduced into 660 nm GaInP/AlInP lasers with superlattice confinement (SLC) layers, resulting in drastic improvements in lasing performance. Lowest threshold current densities (840 A/cm2) and highest room-temperature values for T0 (167 K) ever reported for 660–680 nm range lasers with bulk active layers were achieved. High-temperature characteristics of the threshold current densities were measured in order to investigate the enhanced carrier confinement effect of MQBs and to estimate the excess nonradiative recombination current component. From the temperature dependence on the excess current density, the activation energies E0 of nonradiative processes were estimated to be 0.45 eV for MQB-SLC lasers, and 0.26 eV for conventional SLC lasers without MQB. The increase of E0 demonstrates the enhanced heterobarrier effect by MQBs.

Refractive indices of Mgx(Zn0.48Cd0.52)1−xSe compounds grown on InP substrates were systematically investigated as a function of Mg composition (x). The refractive indices with various Mg compositions were estimated from the reflectance measurements. By approximating the refractive indices by the modified single effective oscillator method, the direct band gap energy EΓ=2.03+1.45x, the dispersion energy Ed=24.5−15.2x, and the oscillator energy E0=5.13−1.03x were obtained. MgZnCdSe multilayer distributed Bragg reflectors (DBRs) designed by using the refractive indices obtained in this study were fabricated by a molecular beam epitaxy. As a result, high reflectance values over 98% at 595 nm were experimentally obtained for the 30 pairs Mg0.1(Zn0.48Cd0.52)0.9Se/Mg0.6(Zn0.48Cd0.52)0.4Se DBR, and the reflectance spectrum agreed with the theoretical values. Furthermore, good agreements of the experimental and the theoretical maximum reflectance of the DBRs as a function of the layer pair number are obtained. From theoretical investigations of 500–600 nm wavelength range DBRs, reflectance values of 99.9% are calculated for the layer pair numbers from 30 to 40.