Grain boundary structure analysed by a coincidence-site-lattice pattern for a layer stacking structure of the 4<i>H</i>-type Laves phase

Takata, Masaki; Kitano, Yasuyuki; Komura, Y.

doi:10.1107/s0108768188009140

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…Accordingly, the evaluation and refinement of a model structure can be performed using the R-factor defined in a local region , whenever an electron wave scattered by a model structure is accurately computed. In our studies, we use mainly a computer program of convenience to us (Takeda, 1983) based on the multi-slice electron diffraction theory (Cowley, 1981) and the electron optic theory (Ishizuka, 1980), which has been utilized in several studies in material sciences Takata et al, 1989;Muto et al, 1989). With further progress in instrumentation recently developed, such as imaging plates, slow scan CCD camera, and electron energy filters, it is expected that HRTEM becomes a qualifiable measurement of local structures in near future.…”

Section: Microscopy: Technical Backgroundmentioning

confidence: 99%

Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

Takeda

1998

Microsc. Res. Tech.

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Recent structural studies of point‐defect‐agglomerates in Si and Ge by high‐resolution transmission electron microscopy (HRTEM) are compiled along with some new results. After examining the wave nature of incident electrons on defect formation during HRTEM observation and the correlated recombination of point defects under electron irradiation, we show that HRTEM is the unique means to analyze the atomic structure of small agglomerates of point defects, nanometer in size, inside a crystal. Emphasis is placed on the extension of studies made possible only by the elaborate and crucial structure determination by HRTEM: the mechanism of agglomeration at the atomic level, the extraction of novel unit structures of point defects, and the electronic structure of the agglomerate. Some examples on the subjects are demonstrated in cases of the {113} and {001} defects. The effect of specimen surfaces on structure determination is also discussed. Finally, a development of TEM technique with in‐situ optical spectroscopy is described, which is utilized to pursue interaction of point defects under electron irradiation and thus may reinforce HRTEM experiments. Microsc. Res. Tech. 40:313–335, 1998. © 1998 Wiley‐Liss, Inc.

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Section: Microscopy: Technical Backgroundmentioning

confidence: 99%

Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

Takeda

1998

Microsc. Res. Tech.

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Microstructure of melt-quenched films of ZrFe2 Laves phase with 0, 1 and 5 at% boron additions

et al. 1996

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Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials

Chen

Kumar

Yahagi

et al. 2021

Journal of Applied Physics

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Intermetallic compounds have been proposed as potential interconnect materials for advanced semiconductor devices. This study reports the interdiffusion reliability and resistivity scaling of three low-resistivity intermetallic compounds (Cu2Mg, CuAl2, and NiAl) formed on thermally grown SiO2. Experimental observations and thermodynamic calculations indicated good interdiffusion reliability with CuAl2 and NiAl but not with Cu2Mg. This was due to slow reaction between Al and SiO2 in conjunction with strong chemical bonds of Cu–Al and Ni–Al. As for resistivity scaling, all three intermetallic compounds showed better resistivity scalability than Cu. Resistivity of the thin films was measured and characteristic parameters were obtained by curve fitting using a classical scattering model. First-principles calculations were carried out to determine the electron mean free path and bulk resistivity in order to explain the resistivity scaling. The results showed the importance of having optimum microstructure features, i.e., low-defect-density surface, interface, and grain boundaries in addition to optimum material properties, i.e., a short mean free path and low bulk resistivity. CuAl2 and NiAl appeared to satisfy the interdiffusion and resistivity conditions and be promising candidates to replace Cu interconnections for future devices.

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Grain boundary structure analysed by a coincidence-site-lattice pattern for a layer stacking structure of the 4H-type Laves phase

Cited by 4 publications

References 6 publications

Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

Microstructure of melt-quenched films of ZrFe2 Laves phase with 0, 1 and 5 at% boron additions

Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials

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