Germanium Processing

Gamble, Harold; Armstrong, B.M.; Baine, Paul; Low, Yee; Rainey, Paul; Mitchell, S.J.N.; McNeill, David

doi:10.1007/978-3-642-15868-1_1

Cited by 3 publications

(2 citation statements)

References 66 publications

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“…Though, this advantage is counterbalanced by the enhanced free carrier absorption and non-radiative recombination rate, which could actually hinder the lasing at all [8]. Moreover, the achievement of a heavy n-type doping has proven to be difficult in Ge, owing to low solubility, fast diffusion, and limited activation of the dopants [9,10].…”

Section: Introductionmentioning

confidence: 99%

Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

Capellini¹,

Reich²,

Guha³

et al. 2014

Opt. Express

106

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In this work we study, using experiments and theoretical modeling, the mechanical and optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the art complementary metal-oxide-semiconductor fabrication line, using fully qualified materials and methods. We show that these microstructures can be used as active lasing materials in mm-long Fabry-Perot cavities, taking advantage of strain-enhanced direct band gap recombination. The results of our study can be realistically applied to the fabrication of a prototype platform for monolithic integration of near infrared laser sources for silicon photonics.

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Section: Introductionmentioning

confidence: 99%

Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

Capellini¹,

Reich²,

Guha³

et al. 2014

Opt. Express

106

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show abstract

“…Although optical gain values as high as 1000 cm À1 are expected in highly phosphorous-doped Ge layers ($10 20 cm À3 ), a maximum gain of $50 cm À1 has been reported. 7 This remarkable difference can be due to the inherent difficulty to achieve the requested high active n-type doping density in Ge, 8 and/or, as recently suggested in Ref. 9, to an oversimplification of the optical gain model proposed in Refs.…”

Section: Introductionmentioning

confidence: 99%

Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Capellini

Kozlowski

Yamamoto

et al. 2013

Journal of Applied Physics

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We have analyzed the strain distribution and the photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method. The tensile strain in the Ge microstructures is obtained by using a SiN stressor layer. Different shapes of microstructure, allowing the Ge layers to freely expand into one, two, or three dimensions, resulted in different strain distribution profiles. Maximal equivalent biaxial tensile strain values up to ~0.8% have been measured. Room temperature photoluminescence emission has been observed and attributed to direct-band gap recombination spectrally shifted by tensile strai

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Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor

et al. 2023

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Germanium Processing

Cited by 3 publications

References 66 publications

Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor

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