Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Capellini, Giovanni; Kozlowski, Grzegorz; Yamamoto, Yuji; Lisker, M; Wenger, Christian; Niu, Guangda; Zaumseil, P.; Tillack, Bernd; Ghrib, A.; Kersauson, M. de; Kurdi, M. El; Boucaud, P.; Schroeder, Thomas

doi:10.1063/1.4772781

Cited by 93 publications

(73 citation statements)

References 19 publications

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“…Further down the spatial scale, high resolu-tion electron backscatter diffraction is another technique that shares some similarities with the technique described in this paper, and that balances limited probing depth with a higher spatial resolution (Wilkinson et al, 2014). Monochromatic synchrotron X-ray micro-diffraction measurements were also performed in Ge devices (Capellini et al, 2013;Etzelstorfer et al, 2014;Ike et al, 2015;Chahine et al, 2015;Keplinger et al, 2016). Direct measurements of the atomic planes spacing with sub-micron resolution were obtained.…”

Section: Introductionmentioning

confidence: 99%

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering

et al. 2016

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Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.

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Section: Introductionmentioning

confidence: 99%

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering

et al. 2016

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“…This is the main obstacle to the fabrication of efficient group IV light emitters, especially lasers. Despite this fundamental limitation, progress has recently been made concerning the luminescence efficiency of strain-engineered Ge by inducing high biaxial [1][2][3] or uniaxial 4,5 tensile strain. Tensile distortion of the Ge lattice modifies the electronic band structure of Ge by reducing the energy difference between the -and L-valleys.…”

Section: Introductionmentioning

confidence: 99%

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

et al. 2015

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The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the demonstration of low temperature lasing provide new perspectives to the fabrication of Si photonic circuits. This work addresses the progress in GeSn alloy epitaxy aiming at room temperature GeSn lasing. Chemical vapor deposition of direct bandgap GeSn alloys with a high -to L-valley energy separation and large thicknesses for efficient optical mode confinement is presented and discussed. Up to 1 µm thick GeSn layers with Sn contents up to 14 at.% were grown on thick relaxed Ge buffers, using Ge 2 H 6 and SnCl 4 precursors. Strong strain relaxation (up to 81 %) at 12.5 at.% Sn concentration, translating into an increased separation between -and L-valleys of about 60 meV, have been obtained without crystalline structure degradation, as revealed by Rutherford backscattering/ion channeling spectroscopy and Transmission Electron Microscopy. Room temperature transmission/reflection and photoluminescence measurements were performed to probe the optical properties of these alloys. The emission/absorption limit of GeSn alloys can be extended up to 3.5 µm (0.35 eV), making those alloys ideal candidates for optoelectronics in the mid-infrared region. Theoretical net gain calculations indicate that large room temperature laser gains should be reachable even without additional doping.

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“…The peak width remains relatively unchanged indicating that no substantial degradation of the crystalline quality has occurred. Figure 6(c) shows the measured strain values extracted from the peak shifts [31] using a proportionality factor of 390 cm −1 in addition to the corresponding simulated values, both show a trend of decreasing strain as C increases. The discrepancy between the simulated and measured values are likely due to an two dimensional isotropic etching profile being assumed during simulations whereas the fabricated devices have a more complex three dimensional anisotropic etching profile, however the strain distribution should not be effected by the anisotropic etching profile as the symmetry is the same.…”

Section: Raman Spectroscopymentioning

confidence: 99%

“…While this strain can be a useful starting point, it is not enough to reduce threshold current density to a practical level. Other methods include depositing nitride stressor layers [16][17][18][19], suspending silicon dioxide and then transferring the strain into Ge micro disks [20,21] and suspending Germanium directly (the focus of this paper) [22][23][24][25][26][27][28][29][30].Suspended structures amplify the small amounts of tensile biaxial strain introduced during the epitaxial growth of Ge on Si. Certain regions of the Ge are suspended in which the membrane constricts resulting in an enhancement of the tensile strain, and the regions which are still tethered to the rest of the wafer (referred to as pads) relax resulting in a compressive strain.…”

Section: Introductionmentioning

confidence: 99%

Enhanced light emission from improved homogeneity in biaxially suspended Germanium membranes from curvature optimization

Burt¹,

Al-Attili²,

Zuo³

et al. 2017

Opt. Express

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A silicon compatible light source is crucial to develop a fully monolithic silicon photonics platform. Strain engineering in suspended Germanium membranes has offered a potential route for such a light source. However, biaxial structures have suffered from poor optical properties due to unfavorable strain distributions. Using a novel geometric approach and finite element modelling (FEM) structures with improved strain homogeneity were designed and fabricated. Micro-Raman (μ-Raman) spectroscopy was used to determine central strain values. Micro-photoluminescence (μ-PL) was used to study the effects of the strain profiles on light emission; we report a PL enhancement of up to 3x by optimizing curvature at a strain value of 0.5% biaxial strain. This geometric approach offers opportunity for enhancing the light emission in Germanium towards developing a practical on chip light source.© 2017 Optical Society of America OCIS codes: (220.0220) Optical design and fabrication; (250.0250) Optoelectronics. References and links1. D. A. B. Miller, "Rationale and challenges for optical interconnects to electronic chips," Proc. IEEE 88(6), 728-749 (2000). 2. R. Soref, "Mid-infrared photonics in silicon and germanium," Nat. Photonics 4(8), 495-497 (2010).

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Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Cited by 93 publications

References 19 publications

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Enhanced light emission from improved homogeneity in biaxially suspended Germanium membranes from curvature optimization

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