Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures

Liu, R.; Mei, Jin; Srinivasan, Sridhar; Ponce, Fernando; Omiya, H.; Narukawa, Yukio; Mukai, Takashi

doi:10.1063/1.2388895

Cited by 66 publications

(36 citation statements)

References 15 publications

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“…However, despite the continuous improvement of the performances of such nitride-based devices, the efficiency of green LEDs remains insufficient and green LDs are still far from realization. A major obstacle to the realization of these devices is thought to be the large internal electric field [6] and the generation of misfit dislocations [7] caused by the large lattice mismatch between the GaN template and the GaInN active layer. There have been many reports on LEDs grown in nonpolar planes, such as the a-plane and m-plane, and in semipolar planes; thus, the problem of the large internal electric field can be solved in principle [8][9][10][11][12].…”

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confidence: 99%

Improvement in crystalline quality of thick GaInN on m‐plane 6H‐SiC substrates using sidewall epitaxial lateral overgrowth

Senda

Miura

Kawashima

et al. 2008

Phys. Status Solidi (c)

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We report the fabrication of an epitaxial lateral overgrown (ELO) GaInN layer on a high crystalline‐quality‐grooved GaN template, which is improved by a sidewall ELO (SELO) technology. The photoluminescence peak intensity of ELO‐grown GaInN layer on the SELO GaN underlying layer is twice as high as that of ELO‐grown GaInN layer on the m‐plane GaN template. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Improvement in crystalline quality of thick GaInN on m‐plane 6H‐SiC substrates using sidewall epitaxial lateral overgrowth

Senda

Miura

Kawashima

et al. 2008

Phys. Status Solidi (c)

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“…23,24 When free surfaces intercepted the epitaxial interface, e.g., due to pits, relaxation proceeded through basal slip of misfit dislocation half-loops. 25 Below h cr (according to the People-Bean model), 26 the film retains a principally elastic strain state and the compositional pulling phenomenon appears. 27,28 Above h cr , reciprocal space x-ray diffraction (XRD) maps of asymmetrical reflections often exhibit double points associated with discontinuous strain relaxation along the growth direction, and what may also be a chemical discontinuity.…”

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Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Bazioti

Papadomanolaki

Kehagias

et al. 2015

Journal of Applied Physics

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Articles you may be interested inStructural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy J. Appl. Phys. 115, 213506 (2014) We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults and threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults. V C 2015 AIP Publishing LLC. [http://dx

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“…Liu et al (37) attributed the relatively small reduction in the amount of plastic strain in the growth of InGaN on GaN to the difficulty in forming these dislocations. Also the number of pyramidal dislocations is greatly reduced when growth planes other than the plane are exposed for growth either by etching the GaN substrate to form etch pits (38) or by creating mesas (39). This is attributed to basal plane dislocations with smaller critical resolved shear stresses being created instead to relieve the plastic strain now that there are shear stresses on the basal plane.…”

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confidence: 93%

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

Batyrev¹,

Wu²,

Chung³

et al. 2013

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Sensors and Electron Devices Directorate, ARLApproved for public release; distribution unlimited. ii REPORT DOCUMENTATION PAGEForm Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)February 2013 ARL-TR-6350 SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTWe present efforts aimed at establishing a multiscale approach for simulating dislocations in aluminum gallium nitride ((Al)GaN) semiconductors. We performed quantum mechanical and classical molecular dynamics (MD) simulations to study the electronic and atomic structure of threading edge and screw dislocations in AlGaN, focusing on the structure of the dislocation core and the electrical activity of dislocations, and estimating dislocation velocities as a function of applied stress and temperature. We used the calculated mobility functions from MD to study different junction configurations using a discrete dislocation dynamics (DDD) simulator, ParaDiS. Finally, we predicted the most likely slip planes in wurtzite (Al)GaN semiconductors based on general crystallographic principles. The most important results are (1) aluminum (Al) atoms do not segregate to the dislocation core and atoms in the dislocation core do not produce any defect levels in the bandgap; (2) we performed first time classical MD calculations of dislocation velocity as a function of applied stress for three slip systems in gallium nitride (GaN); (3) we adapted ParaDiS to simulate wurtzite semiconductors; and (4) the plane strain produced by the lattice mismatch during growth on the plane does not create a shear stress on the basal or prismatic planes, hence the operational slip plane must be a pyramidal plane, the most probable being the slip system. iii Contents SUBJECT TERMS

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Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures

Cited by 66 publications

References 15 publications

Improvement in crystalline quality of thick GaInN on m‐plane 6H‐SiC substrates using sidewall epitaxial lateral overgrowth

Improvement in crystalline quality of thick GaInN on m‐plane 6H‐SiC substrates using sidewall epitaxial lateral overgrowth

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

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