InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.
A high-crystalline-quality thick m-plane Ga 0:92 In 0:08 N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of ð10 1 10Þ in the 2=!-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm.
We fabricated GaInN/GaN multiple quantum wells (MQWs) on a high-crystalline-quality thick m-plane GaInN underlying layer, and the integral photoluminescence (PL) intensity was compared with that of the same GaInN/GaN MQWs on a high-crystalline-quality m-plane GaN underlying layer. The light emission wavelengths from the MQWs were violet (∼396 nm), blue (∼450 nm), and green (∼535 nm). The integral PL intensities obtained from the GaInN/GaN violet, blue, and green MQWs on the high-crystalline-quality thick GaInN underlying layer were 1.1, 1.5, and 2.1 times higher than these of the MQWs on the m-plane GaN underlying layer, respectively.
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