Improvement in crystalline quality of thick GaInN on m‐plane 6H‐SiC substrates using sidewall epitaxial lateral overgrowth

Senda, Ryota; Miura, Aya; Kawashima, T.; Iida, Daisuke; Nagai, Takeharu; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

doi:10.1002/pssc.200779252

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…Anyway, similar as on other foreign substrates for non-polar GaN growth, also on SiC typically large stacking fault densities around or above 10 6 cm −2 are observed [77,83]. Also here, SLEO was successfully applied to decrease both the dislocation and the stacking fault density [80,84].…”

Section: M-plane Gansupporting

confidence: 59%

Semipolar GaN grown on foreign substrates: a review

Scholz

2012

Semicond. Sci. Technol.

156

151

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Non-and semipolar GaN-based optoelectronic device structures have attracted much attention in recent years. Best results have been obtained on small bulk substrates cut from thick c-plane epi-wafers. However, owing to the limited size of such substrates, it is very attractive to study hetero-epitaxial approaches on foreign substrates. In this paper, we review the current state of such studies which eventually lead to large area non-or semipolar nitride structures. The simplest approach is to use planar sapphire or SiC wafers of non-c-plane orientations on which potentially less polar GaN can be grown. However, typically huge dislocation and in particular stacking fault densities evolve. More sophisticated approaches make use of the good GaN growth performance in the c-direction, eventually leading anyway to large area non-or semipolar structures. Several such approaches are discussed in this paper.

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Section: M-plane Gansupporting

confidence: 59%

Semipolar GaN grown on foreign substrates: a review

Scholz

2012

Semicond. Sci. Technol.

156

151

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Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells

Okada

Tadatomo

2022

Crystals

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We report the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). Although it was difficult to grow ELO-InGaN layers on patterned GaN templates, we succeeded in growing ELO-InGaN layers on a patterned InGaN template. The full width at half maximum of the X-ray rocking curve of ELO-InGaN on the InGaN templates was less than that of non-ELO InGaN. The photoluminescence intensity of InGaN/GaN multiple quantum wells on ELO-InGaN was approximately five times stronger than that on the {11-22} GaN template.

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Improvement in crystalline quality of thick GaInN on m‐plane 6H‐SiC substrates using sidewall epitaxial lateral overgrowth

Cited by 2 publications

References 13 publications

Semipolar GaN grown on foreign substrates: a review

Semipolar GaN grown on foreign substrates: a review

Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells

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