Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization

Berning, D.W.; Hefner, Allen R.; Ortiz-Rodríguez, J.M.; Hood, C.; Rivera, Abdiel

doi:10.1109/ias.2006.256543

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…The results indicate that, compared to the Si PiN diode, the SiC JBS diode has lower leakage current for anode voltage levels below 4 kV for all temperatures and that its leakage has less variation with temperature but more variation with voltage. -pulse switching test circuit and timing waveforms that are used to measure the circuit interaction between the Si IGBT and the SiC JBS and SiC PiN diodes [10] using the gate driver of [11]. Note that this circuit can emulate a half-bridge module where the IGBT anti-parallel diode of the high-side switch is recovered by the low-side switch, or this circuit can also represent a single switch and commutating diode in a boost converter.…”

Section: Medium-voltage Sic Jbs Diode Developmentmentioning

confidence: 99%

Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications

Duong¹,

Hefner²,

Hobart³

et al. 2011

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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A new 60 A, 4.5 kV SiC JBS diode is presented, and its performance is compared to a Si PiN diode used as the antiparallel diode for 4.5 kV Si IGBTs. The I-V, C-V, reverse recovery, and reverse leakage characteristics of both diode types are measured. The devices are also characterized as the anti-parallel diode for a 4.5 kV Si IGBT using a recently developed high-voltage, double-pulse switching test system. The results indicate that SiC JBS diodes reduce IGBT turn-on switching loses by about a factor of three in practical applications. Furthermore, the peak IGBT current at turn-on is typically reduced by a factor of six, resulting in substantially lower IGBT stress. Circuit simulator models for the 4.5 kV SiC JBS and Si PiN diodes are also developed and compared with measurements.

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Section: Medium-voltage Sic Jbs Diode Developmentmentioning

confidence: 99%

Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications

Duong¹,

Hefner²,

Hobart³

et al. 2011

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

Self Cite

View full text Add to dashboard Cite

show abstract

“…For high-voltage drain or anode leakage measurements, a second amplification stage increases the total voltage gain close to ×1500, allowing the applied pulse to reach almost 15 kV. A higher gain first stage amplifier can extend the range of the second stage to 25 kV which is the hardware capability of the system [7].…”

Section: B Probes and Gains Settingsmentioning

confidence: 99%

“…Although precise thermal control is another of the features of the custom-made test bed, the actual temperature controller being used is not part of the instruments managed by the curve tracer program. A description of how the 25 kV voltage-isolated temperature-controlled heat sink is operated and adjusted through feedback from the test bed is presented in [7].…”

Section: General Measurement Proceduresmentioning

confidence: 99%

Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

Ortiz-Rodríguez

Hefner

Berning

et al. 2006

2006 IEEE Workshops on Computers in Power Electronics

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A 500 A device characterizer utilizing a pulsed-linear amplifier

Lacouture

Bayne

2016

Review of Scientific Instruments

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With the advent of modern power semiconductor switching elements, the envelope defining "high power" is an ever increasing quantity. Characterization of these semiconductor power devices generally falls into two categories: switching, or transient characteristics, and static, or DC characteristics. With the increasing native voltage and current levels that modern power devices are capable of handling, characterization equipment meant to extract quasi-static IV curves has not kept pace, often leaving researchers with no other option than to construct ad hoc curve tracers from disparate pieces of equipment. In this paper, a dedicated 10 V, 500 A curve tracer was designed and constructed for use with state of the art high power semiconductor switching and control elements. The characterizer is a physically small, pulsed power system at the heart of which is a relatively high power linear amplifier operating in a switched manner in order to deliver well defined square voltage pulses. These actively shaped pulses are used to obtain device's quasi-static DC characteristics accurately without causing any damage to the device tested. Voltage and current waveforms from each pulse are recorded simultaneously by two separate high-speed analog to digital converters and averaged over a specified interval to obtain points in the reconstructed IV graph.

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Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization

Cited by 8 publications

References 3 publications

Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications

Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications

Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

A 500 A device characterizer utilizing a pulsed-linear amplifier

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