Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications

Abstract

A new 60 A, 4.5 kV SiC JBS diode is presented, and its performance is compared to a Si PiN diode used as the antiparallel diode for 4.5 kV Si IGBTs. The I-V, C-V, reverse recovery, and reverse leakage characteristics of both diode types are measured. The devices are also characterized as the anti-parallel diode for a 4.5 kV Si IGBT using a recently developed high-voltage, double-pulse switching test system. The results indicate that SiC JBS diodes reduce IGBT turn-on switching loses by about a factor of three in practical applications. Furthermore, the peak IGBT current at turn-on is typically reduced by a factor of six, resulting in substantially lower IGBT stress. Circuit simulator models for the 4.5 kV SiC JBS and Si PiN diodes are also developed and compared with measurements.

Silicon carbide power device status and issue

“…The SiC GTO is susceptible to degradation with operation if basal plane defects are present in the epitaxial layer. A record lxl cm2 size GTO with a breakdown voltage of 9kV has been demonstrated [21]. A forward drop of 3.7 Vat applications, a peak current of 12.8 kA conducted with a pulse width of 17.4 �s.…”

Electro-thermal simulation and design of a 60 A, 4.5 kV half-bridge Si IGBT/SiC JBS hybrid power module

“…This has become a critical problem for Naval applications which require medium voltage power systems to be built on relatively small platforms due to the large increase in electrical power demanded by e.g., hybridor all-electric propulsion, high power radar and new weapons systems. The 4.5 kV SiC JBS diodes developed in [1,2] and the 4.5 kV Si-IGBT/SiC-JBS hybrid modules being developed in this work are motivated by this critical need. It is expected that the use of these hybrid modules for the Naval platform will enable reduced size, weight, and cooling requirements and will result in improved operational capabilities and significant fuel savings.…”

Reliability Assessment of Hybrid Silicon-Silicon Carbide IGBT Implemented on an Inverter for Photo Voltaic Applications

“…Compared to the conventional devices, this hybrid solution provides better power density, efficiency and the lowest reverse recovery loss, which is considered to be the most significant factor that led to its superior turn-on loss performance. In [8] presented 4.5-kV hybrid IGBT. Compared to the conventional devices, the turn-on loss of the IGBT decreased by about 30%.…”