As the industry is targeting the sub-100nm nodes, the pressure on the data path and tapeout flow is growing. Design complexity and increased deployment of resolution enhancement techniques (RET) result in rapidly growing file sizes, which turns what used to be the relatively simple task of mask data preparation into a real bottleneck. Previous work indicated that the properties of the incoming layout ñ hierarchy, grid, aggressiveness of the RET solution have a major impact on the performance of fracturing and mask writing The tuning of OPC can reduce itís impact on subsequent fracturing. This study investigates the impact of OPC setup-various fragmentation parameters like fragment length, density, interaction radius and, various line-end correction schemes on the performance parameters for the mask data preparation and mask writing. Parameters like run-time, file size, shot count and small figures will be reported in dependence on the input layout preparation history. Approaches to optimize the integrated RET and MDP flow while maintaining manufacturability and the required CD control are introduced and evaluated.