Gate oxide integrity (GOI) of MOS transistors with W/TiN stacked gate

Lee, D.H.; Yeom, Kyongsik; Cho, M.H.; Kang, Noh-Gyoung; Shim, Tae‐Hun

doi:10.1109/vlsit.1996.507852

Cited by 14 publications

(3 citation statements)

References 1 publication

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“…As a result, no marked leakage currents were observed in the TiN gate multi-FinFETs. This indicates that the quality of gate oxide layer of 2.2 nm on the sidewall surface of the Si-fin channel was not deteriorated in the sputtering process, which is consistent with the reported gate oxide integrity data [23]. The reliability issue of the thin gate oxide by the TiN deposition still requires further study.…”

Section: Resultssupporting

confidence: 87%

Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

Liu

Kijima

Sugimata

et al. 2006

IEEE Trans. Nanotechnology

107

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The titanium nitride (TiN) gate electrode with a tunable work function has successfully been deposited on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering. It was found that the work function of the TiN ( TiN ) slightly decreases with increasing nitrogen (N 2 ) gas flow ratio, = N 2 (Ar + N 2 ) in the sputtering, from 17% to 100%. The experimental threshold voltage ( th ) dependence on the shows that the more offers the lower th for the TiN gate n-channel FinFETs. The composition analysis of the TiN films with different showed that the more amount of nitrogen is introduced into the TiN films with increasing , which suggests that the lowering of TiN with increasing should be related to the increase in nitrogen concentration in the TiN film. The desirable th shift from 0.22 to 0.22 V was experimentally confirmed by fabricating n + poly-Si and TiN gate n-channel multi-FinFETs without a channel doping. The developed simple technique for the conformal TiN deposition on the sidewalls of Si-fin channels is very attractive to the TiN gate FinFET fabrication.

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Section: Resultssupporting

confidence: 87%

Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

Liu

Kijima

Sugimata

et al. 2006

IEEE Trans. Nanotechnology

107

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“…From the above considerations, one can find many candidates for metal gate materials published in the literature [4][5][6][7][8]. Some of these materials are Ti, Ta, W, Mo, Al, Pt, TiN, TaN, WN, MoN, NbN or gate stacks such as WITiN, polySi/TiN, poly/Si/WN, WSix/TiN.…”

Section: Work Function and Mosfet Threshold Voltagementioning

confidence: 99%

Metal gates for advanced CMOS technology

Maiti

Tobin

1999

SPIE Proceedings

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This paper will provide an overview of the emerging trends in metal gate solutions for advanced CMOS technology. Performance enhancement in silicon-based CMOS technology through MOSFET scaling has shown some limitations with the current polysilicon gate electrode. Replacing polysilicon gate electrode by metal appears to be promising. However, the choice of the metal gate material depends on its work function (single or dual metal gates), thermal/chemical stability with surrounding materials, process integration (conventional or inlaid approach), deposition process, resistivity, and eventually performance, reliability and future scaling. This paper will discuss some of the results published in the literature that address some of these issues and propose future directions. Single mid-gap metal gate approach appears to be simpler from an integration point of view but achieving low MOSFET threshold voltage is a concern. Some channel engineering approaches have been reported to address this issue. Dual metal gate approach with work function similar to n and p doped poly-Si appears ideal, although processing complexity could be a hindrance. Also the need for inlaid gate integration could be enhanced because of thermal/chemical stability effects of metal gate electrode with underlying gate dielectric, the inability to etch new materials or to reduce device instability due to film stress as in the conventional approach. The performance improvement of CMOS devices has been estimated with metal gates along with reliability issues.

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“…The resistivity of metal nitride gate electrode can be reduced by the stacking structure, such as W/TiN [5][6][7], W/WN x [6], Ta/TaN x [8]. However, it was also found that Φ m of bilayer structure differs from the Φ m of bottom gate electrode material [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%