Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

Liu, Yongxun; Kijima, Shinya; Sugimata, Etsuro; Masahara, Meishoku; Endo, Kazuhiko; Matsukawa, Takashi; Ishii, Keisuke; Sakamoto, K.; Sekigawa, Toshihiro; Yamauchi, H.; Takanashi, Y.; Suzuki, Eiichi

doi:10.1109/tnano.2006.885035

Cited by 107 publications

(72 citation statements)

References 31 publications

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“…The further increase of N 2 /(N 2 + Ar) until 0.167 did not influence the TiN work function significantly. On the contrary, Liu et al reported that the TiN work function was also decreased (from 4.82 to 4.71 eV) with the increase of N 2 /(N 2 + Ar) ratio from 0.17 to 0.83, which is in good agreement with our results (see Fig. ).…”

Section: Resultssupporting

confidence: 93%

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Arulkumaran

et al. 2016

Physica Status Solidi (a)

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AlGaN/GaN high electron mobility transistors (HEMTs) on Si were fabricated and studied using sputtered TiN Schottky gate. The sputtered TiN on AlGaN/GaN HEMTs exhibit an improved Schottky barrier height (SBH) of ∼1.1 eV, which is larger than the Schottky contacts formed by the other reported TiN‐based stacks and by most of Ni/Au‐free materials. The improvement of SBH is due to the increase of metal work function either by the incorporation of oxygen in sputtered TiN or by using a high N2/Ar ratio during the sputtering process. Although the HEMTs with TiN gate show comparable DC output and transfer characteristics compared to devices with Ni/Au gate, they exhibit enhanced OFF‐state breakdown voltages (BVgd) of ∼48–58 V. This is consistent with the observation of an order of magnitude lower reverse gate leakage current and is also well agreed by the enhanced SBH of the sputtered TiN as compared to the Ni/Au gate. With reference to the HEMTs with Ni/Au gate, a slight increase of dynamic/static on‐resistances (Rds[ON]) ratio (∼8%) was observed in the sputtered TiN gate HEMTs.

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Section: Resultssupporting

confidence: 93%

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Arulkumaran

et al. 2016

Physica Status Solidi (a)

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“…[1][2][3][4][5] As a functional CMOS circuit, a static random access memory (SRAM) has actively been developed using the PVD-TiN gate FinFETs owing to the symmetrical V th . [6][7][8] However, the metal gate material such as a TiN could cause V th variations owing to its grain granularity, and metal grainorientation effects induce a work function variation (WFV).…”

Section: Introductionmentioning

confidence: 99%

Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n⁺-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Kamei

Liu

Endo

et al. 2011

Jpn. J. Appl. Phys.

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We have comparatively investigated the electrical characteristics including threshold voltage (V th ) variability and mobility by fabricating n þpolycrystalline silicon (poly-Si) gate and physical-vapor-deposited (PVD) titanium nitride (TiN) gate fin-type double-gate metal-oxidesemiconductor field-effect transistors (FinFETs), and demonstrated 20-nm-thick PVD-TiN gate FinFETs with a symmetrical V th . It is experimentally found that the gate stack of a 20-nm-thick PVD-TiN layer capped with a 100-nm-thick n þ -poly-Si layer is very effective for setting a symmetrical V th for undoped FinFETs keeping almost the same V th variability and mobility as those in the case of the n þ -poly-Si gate only. On the other hand, mobility degradation was observed in the case of pure 50-nm-thick PVD-TiN gates. These results indicate that mobility degradation probably caused by the thick metal gate induced mechanical stress can be effectively suppressed by reducing the PVD-TiN thickness to 20 nm or less. #

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“…2(e) and 2(j). The CG electrodes were also patterned by EB lithography and fabricated using a combination of inductively coupled plasma (ICP) RIE for n + -poly-Si and wet etching for PVD-TiN (33)(34)(35). The three types of devices obtained are referred to as TF-ONO, TF-ANO, and RF-ANO SOI-FinFET flash memories.…”

Section: Device Fabricationmentioning

confidence: 99%

(Invited) Floating Gate Type SOI-FinFET Flash Memories with Different Channel Shapes and Interpoly Dielectric Materials

Liu¹,

Nabatame

Matsukawa³

et al. 2016

ECS Trans.

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The floating gate (FG)-type silicon-on-insulator (SOI)-FinFET flash memories with triangular-fin (TF) and rectangular-fin (RF) channels and with different interpoly dielectric (IPD) materials have been successfully fabricated using (100)-and (110)-oriented SOI wafers and orientation dependent wet etching. The electrical characteristics of the fabricated FG-type SOI-FinFET flash memories including threshold voltage (V t ) variability, program/erase (P/E) speed, memory window, endurance, and data retention at room temperature and 85 o C have been comparatively investigated. It was experimentally found that the TF channel flash memory with an Al 2 O 3 -nitride-oxide (ANO) IPD layer shows a higher P/E speed, a larger memory window, and a lower-voltage operation as compared to the RF channel flash memories with the same ANO IPD layer. Such a high performance of the TF-ANO flash memory is due to the high-k effect of the Al 2 O 3 layer and the electric field enhancement at the sharp foot edges of the TF.

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Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

Cited by 107 publications

References 31 publications

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n⁺-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

(Invited) Floating Gate Type SOI-FinFET Flash Memories with Different Channel Shapes and Interpoly Dielectric Materials

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Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

Cited by 107 publications

References 31 publications

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

(Invited) Floating Gate Type SOI-FinFET Flash Memories with Different Channel Shapes and Interpoly Dielectric Materials

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Product

Resources

About

Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n⁺-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors