Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing

Cassé, M.; Pretet, J.; Cristoloveanu, S.; Poiroux, T.; Fenouillet-Béranger, C.; Fruleux, F.; Raynaud, C.; Reimbold, G.

doi:10.1016/j.sse.2004.01.002

Cited by 44 publications

(17 citation statements)

References 7 publications

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“…In partially depleted (PD) devices, the increase in body potential directly lowers the threshold voltage [6], giving rise to a 'kink' in the drain current [8]. In fully depleted (FD) MOSFETs, GIFBE modifies the potential at the back interface (film-buried oxide) and the front-channel threshold voltage is indirectly lowered by interface coupling effect [9]. The second peak in transconductance is amplified by driving the back interface towards accumulation (by substrate biasing or radiation effects).…”

Section: Gate-induced Floating-body Effects (Gifbe)mentioning

confidence: 99%

New physics mechanisms enabled by advanced SOI CMOS engineering

Cristoloveanu

2004

Materials Science and Engineering: B

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Section: Gate-induced Floating-body Effects (Gifbe)mentioning

confidence: 99%

New physics mechanisms enabled by advanced SOI CMOS engineering

Cristoloveanu

2004

Materials Science and Engineering: B

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“…The increasing tunneling current in advanced silicon-on-insulator (SOI) devices has been reported to cause a new floating-body (floating) effect in the linear operation region [2], a phenomenon referred to as "linear kink effect" (LKE). Some previous research has also found that LKE gives rise to a second peak of transconductance (gm), particularly in partially depleted (PD) SOI MOSFETs with an FB condition, as well as in fully depleted ones with back gate bias [2], [3]. In addition, numerous studies have re- ported that LKE increases the low-frequency noise and strongly impacts the history effects in digital circuits [4]- [7].…”

Section: On the Origin Of Hole Valence Band Injection On Gifbe In Pd mentioning

confidence: 99%

“…It is closely related to the vertical electrical field. Therefore, LKE is also referred to as gate-induced FB effect (GIFBE) [3]. The mechanism of electron-valence band (EVB) tunneling through an ultrathin oxide is widely accepted as an explanation for GIFBE [2]- [7].…”

Section: On the Origin Of Hole Valence Band Injection On Gifbe In Pd mentioning

confidence: 99%

On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

Dai

Chang

Chu

et al. 2010

IEEE Electron Device Lett.

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This letter systematically investigates the mechanism of gate-induced floating-body effect (GIFBE) in advanced partially depleted silicon-on-insulator metal-oxide-semiconductor fieldeffect transistors. Based on different operation conditions, we found that the hole current collected by the body terminal is strongly dependent on electrons in the inversion layer under a source/drain ground. This implies that GIFBE can be attributed to anode hole injection (AHI) rather than the widely accepted mechanism of electron valence band tunneling. Moreover, GIFBE was also analyzed as a function of temperature. The results provide further evidence that the accumulation of holes in the body results from the AHI-induced direct tunneling current from the gate. Index Terms-Electron-valence band (EVB) tunneling, gate-induced floating-body effect (GIFBE), linear kink effect, silicon-on-insulator (SOI).

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“…Additional dimensional effects occur as a result of the simultaneous shrinking of the other dimensions: narrow channel effects [43][44][45], gate-induced floating-body effects (GIFBE) due to tunnelling through nanometer thick gate dielectrics [46][47][48], etc. Strain is also size dependent, either if it is embedded in the original SOI wafer (by Smart Cut and bonding process) or generated by the CMOS process.…”

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confidence: 99%

Micro and nano on insulator

Cristoloveanu¹

2008

Phys. Status Solidi (c)

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The nano‐size MOS transistor is the ideal device for the smooth transition from micro‐ to nanoelectronics, the stringent condition being to be fabricated ‘On Insulator'. It is the SOI thickness effect which renders the scaling of MOS transistors intrinsically easier than in bulk Si. In addition, SOI is a most suitable substrate for the implementation of non‐classic or pure nanoelectronic components. The dimensions of state‐of‐the‐art SOI MOSFETs are already measurable in nanometers. We illustrate, from experimental and theoretical viewpoints, a number of nano‐size mechanisms and their implications for multiple‐gate MOSFETs and alternative nano‐devices. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing

Cited by 44 publications

References 7 publications

New physics mechanisms enabled by advanced SOI CMOS engineering

New physics mechanisms enabled by advanced SOI CMOS engineering

On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

Micro and nano on insulator

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