Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

Yuan, Xiaobin; Park, Jae-Eun; Wang, Jing; Zhao, Enhai; Ahlgren, D.; Hook, T.B.; Yuan, Jun; Chan, V.; Shang, Huiling; Liang, Chu-Hsin; Lindsay, Richard; Park, Sungjoon; Choo, Hyotae

doi:10.1109/tdmr.2008.2002350

Cited by 33 publications

(11 citation statements)

References 13 publications

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“…7,8 The leakage current due to gate-induced drain leakage (GIDL) effect in the gate-to-drain overlap region and its contribution to drain current (I D ) is another important issue. [9][10][11][12][13] With the exception of Ref. 13, the presence of I G in the subthreshold region is usually neglected, because its magnitude and impact on I D were lower than those due to GIDL current (I GIDL ).…”

Section: Introductionmentioning

confidence: 99%

Improved modeling of gate leakage currents for fin–shaped field–effect transistors

Garduno¹,

Cerdeira

Estrada

et al. 2013

Journal of Applied Physics

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Articles you may be interested inModel of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 100, 033501 (2012); 10.1063/1.3678023 Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin-shaped field-effect transistors J. Appl. Phys. 109, 084524 (2011); 10.1063/1.3575324 Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device J. Appl. Phys. 109, 084504 (2011); 10.1063/1.3553836Modeling of spin metal-oxide-semiconductor field-effect transistor: A nonequilibrium Green's function approach with spin relaxation J. Appl. Phys.Modeling of gate-induced drain leakage current in n-type metal-oxide-semiconductor field effect transistorRecently, we developed a symmetric doped double gate model for MOSFETs, which includes a direct tunneling model for gate current considering its dependence on the voltages applied to the gate and drain electrodes. Since different tunneling mechanisms can dominate the gate and drain/ source leakage currents depending on the transistor operation regime, the gate stack dimensions and the insulating materials used as gate dielectric, in this work, we analyze and model specific features of such currents in SOI FinFET devices. We present an analytical model which takes into account three main conduction mechanisms of leakage currents associated with the gate structure and is valid for a wide operation range. An improved model to describe the behavior of direct tunneling is proposed to avoid the use of fitting parameters. It is shown that carriers tunneling assisted by trap states in the dielectric material of the overlap regions should be considered, as it can become predominant in the subthreshold regime. Moreover, a band-to-band tunneling model is included because of its large impact on the drain leakage current. The present improved model for gate leakage currents is validated by experimental results obtained on FinFETs with different dimensions, gate dielectric materials and performed under different bias conditions. V C 2013 American Institute of Physics. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Improved modeling of gate leakage currents for fin–shaped field–effect transistors

Garduno¹,

Cerdeira

Estrada

et al. 2013

Journal of Applied Physics

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“…However, GIDL can be understood in a relatively simple manner as BTBT (band-toband tunneling) of the reverse biased n + drain to p-well junction just under the gate dielectric for an n-channel transistor. The equation of BTBT is given as follows [1]:…”

Section: Resultsmentioning

confidence: 99%

“…(1), J BTBT is the current density due to BTBT, E j is the maximum electric field in the reverse biased p-n junction and V app is the reverse bias applied to the p-n junction [1]. In addition, the constants A and B are given by…”

Section: Resultsmentioning

confidence: 99%

The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current

Lau

Yang

Siah

et al. 2012

Microelectronics Reliability

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“…However, GIDL can be understood in a relatively simple manner as BTBT (band-to-band tunneling) of the reverse biased n + drain to p-well junction just under the gate dielectric for an n-channel transistor. The equation of BTBT is given as follows [1]:…”

Section: Resultsmentioning

confidence: 99%

“…For n-channel MOS transistors with a tensile mechanical stress bias, an additional external tensile stress will make both the bandgap and electron effective mass smaller. The fundamental reason of the much higher sensitivity is because of the exponential factor exp(-B/E j ) in equation (1). However, it appears that the GIDL current of a p-channel MOS transistor is not as sensitive to mechanical stress as that of an n-channel MOS transistor.…”

Section: Resultsmentioning

confidence: 99%

Potential of a Sensitive Silicon Mechanical Stress Sensor Based on a Change in Gate-Induced-Drain Leakage Current

Lau

Yang

et al. 2011

ECS Trans.

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Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the oncurrent or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induceddrain leakage (GIDL) current of an n-channel MOS transistor with tensile mechanical stress bias and the underlying principle will also be discussed.

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Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

Cited by 33 publications

References 13 publications

Improved modeling of gate leakage currents for fin–shaped field–effect transistors

Improved modeling of gate leakage currents for fin–shaped field–effect transistors

The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current

Potential of a Sensitive Silicon Mechanical Stress Sensor Based on a Change in Gate-Induced-Drain Leakage Current

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