GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Li, Lei; Nomoto, Kazuki; Pan, Ming; Li, Wenshen; Hickman, Austin; Miller, J. N.; Lee, Kevin; Hu, Zongyang; Bader, Samuel James; Lee, Soo Min; Hwang, J.C.M.; Jena, Debdeep; Xing, Huili Grace

doi:10.1109/led.2020.2984727

Cited by 90 publications

(64 citation statements)

References 30 publications

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“…Fig. 7 displays the validation of simulation results for V-I and transconductance characteristics against the experimental results [19]. The simulation results confirmed the great accuracy with measured results.…”

Section: Resultssupporting

confidence: 56%

“…The simulation models are validated against the experimental results of LG 55 nm InAlN/GaN HEMT [19]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…To capture the trap-assisted recombination, the SRH model is considered [40]. 19 4.8x10 20 5.3x10 19 Effective electron mass ( ) 0.2m0 0.4m0 0.11m0…”

Section: Device Description Simulation Models and Materials Parametersmentioning

confidence: 99%

“…Polarization induced 2D electron gas (2DEG), wide bandgap, and high mobility of III-nitride heterostructures makes the devices for high-power density microwave applications. The operating frequency of the GaN-based HEMTs is significantly improved by shrink the device size into deep sub-micron for low parasitic and second order effects [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. However, the short distance between the gate to drain degrade the linearity of the device.…”

Section: Introductionmentioning

confidence: 99%

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Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications

Revathy

Boopathi

Nirmal

2021

Preprint

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We present the stable transconductance operation of InGaN/GaN composite channel based HEMTs. LG = 55 nm AlGaN/InGaN/GaN (Device A) and InAlN/InGaN/GaN (Device B) HEMTs were proposed and investigated its operational characteristics using numerical simulation. Existence of deeper potential well, the proposed HEMTs possesses high 2DEG (two-dimensional electron gas) density, enhanced electron confinement, and improved electron mobility. As a result, the device shows enhanced current density, and high linearity operation. Furthermore, Al0.04Ga0.96N superlative back-barrier significantly reduces the buffer leakage current resulting in improved breakdown voltage (VBR). The proposed device A (device B) exhibited 2.81 (5) A/mm of output current density, 0.669 (0.7273) S/mm, 4 (7) V of GVS (gate voltage swing), 55.3 (43.5) V of breakdown voltage, and 252/263 (275/289) GHz of FT/FMAX. This excellent device performances illustrates the potential of InGaN/GaN channel HEMTs for future wide-band telecommunication, radio astronomy, radar and space applications.

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Section: Resultssupporting

confidence: 56%

“…The simulation models are validated against the experimental results of LG 55 nm InAlN/GaN HEMT [19]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…To capture the trap-assisted recombination, the SRH model is considered [40]. 19 4.8x10 20 5.3x10 19 Effective electron mass ( ) 0.2m0 0.4m0 0.11m0…”

Section: Device Description Simulation Models and Materials Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications

Revathy

Boopathi

Nirmal

2021

Preprint

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“…The π -Gate architecture with Case 1 corresponds to an W L = 100 nm and W R = 40 nm while the Case 2 corresponds to a structure with W L = 85 nm and W R = 55 nm.Cases 3 and 4 are similar to Cases 1 and 2 except that the widths of respective legs have been swapped. The minimum feature sizes so considered for analysis are within the limits of those that are feasible experimentally[44][45][46][47].…”

mentioning

confidence: 99%

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Sehra

Kumari

Gupta

et al. 2020

Silicon

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This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T -Gate, and the π -Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures. The work presented in this paper, to the best of author's knowledge, is first in its attempt to systematically bring out both the effect of minimum noise figure metrics and intrinsic gain at the device level for the π -Gate architecture and their recessed counterparts whilst evaluating its stability for high frequency operations. Comparison demonstrates an enhancement in intrinsic gain by 64.5% in case of asymmetric π -Gate and 77% for asymmetric recessed π -Gate in comparison to their T -Gate counterparts. Further, the said architectures possess a wider range of flat gain operation with suppressed values of minimum noise figure metrics. These modifications result in a modest trade off in the minimum noise figures when best case is considered and compared with their T -Gate counterparts. Additionally, it is also demonstrated that such device architectures demonstrate much stable high frequency operation in comparison to their primer. The results so presented establish the superiority of the π -Gate AlGaN/ AlN/GaN HEMTs for low noise and high gain applications.

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III – V and Wide Bandgap

Alomari¹

2022

Advances in Semiconductor Technologies

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GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Cited by 90 publications

References 30 publications

Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications

Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

III – V and Wide Bandgap

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