GaN-based single phase brushless DC motor drive for high-speed applications

Abstract

It is a well-known fact that wide-bandgap (WBG) materials such as gallium nitride (GaN) and silicon carbide (SiC) have superior characteristics compared to silicon (Si) in power electronics and motor drive applications. Performance of a single-phase brushless high-speed DC motor can be improved by using GaN-based drive since it requires high frequency operation and low conduction and switching losses. This paper discusses the implementation of GaN devices to drive a single-phase brushless DC motor. Control strategies and simulation analysis are presented. Comparison is carried out between GaN-based and Sibased brushless DC motor drive systems and the potential benefits of GaN-based drive system are quantified from the efficiency and loss perspective.

Analysis of Rotor Position Detection Performance According to the Frequency of Square Waveform Voltage in the Harmonic Injection Sensorless Method through HILS

“…Meanwhile, studies on electric power converters applied with GaN devices that can switch at higher switching have been actively conducted recently. In addition, as shown in the simulation results in [12], the efficiency of the inverter differs by up to 6% according to the change in the switching frequency of the inverter using the GaN device and the Si device [13]. Thus, these electric power converters have higher efficiency than existing Si-based power semiconductors, and high dielectric breakdown fields, which enable highvoltage operation.…”

“…In this technique, a square harmonic voltage is injected into the current that is the output from the inverter and converted with the dq coordinate system and the q-axis current of the current controller, and the position is estimated on the d-axis. If the frequency of the injected harmonic voltage is changed, the errors in the estimated angle and the estimated speed will be changed [12].…”