A review on gallium nitride switching power devices and applications

Terrestrial neutron-induced single events in GaN

“…A volume of 1cm 2´2 0µm-thick of stoichiometric GaN material was irradiated in normal incidence with 10 8 atmospheric neutrons (equivalent to 570 years at sea-level) in Geant4 simulations [7][8], considering the differential flux spectrum of neutrons (E> 1 MeV) measured by Gordon, Goldhagen et al in Yorktown Heights [9] as the input distribution for the Geant4 general particle source [10]. The list of physical processes employed in simulation (Geant4 version 4.9.4 patch 01 [11]) is based on the standard package of physics lists QGSP_BIC_HP, as described in [5,12]. Output simulation results consist of a series of records describing all the neutron interaction events in the target material, including for each event the nature and the vertex coordinates of the interaction, the energy of the incident neutron, the resulting secondary products, their energies and emission direction vectors.…”

“…A database post-treatment eliminates in the database all secondary particles not able to induce a single event, i.e. not able to deposit an electrical charge in the target material above a certain threshold quantity, fixed in previous studies at 1.8 fC [5,13,14]. Such eliminated particles include the less energetic recoils, all neutrons not interacting with the target and all g photons, p 0 , rare p + and p -, e + , eand h particles.…”

“…GaN is also a very hard mechanically stable wide bandgap semiconductor material, known to its robustness and stability in radiation environments; its interest for nuclear particle detection is essential [1][2][3][4]. More recent growing application-markets (electrical cars, space and avionics) for which high reliability power electronics is needed has accentuated the importance of GaN-based microelectronics and technologies [4][5].…”

Switching losses prediction methods oriented to power MOSFETs – a review

“…Currently, the silicon‐based metal‐oxide‐semiconductor field‐effect transistor (MOSFET) is the preferred semiconductor device in low to medium‐powered high‐frequency power processing applications [1–5]. This kind of transistor represents one of the major sources of power losses and heating in such applications often requiring a proper cooling system to be integrated into the static converter.…”

An Improved Methodology for Switching Losses Estimation in SiC MOSFETs

“…Currently, the silicon power metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the most used semiconductor devices in low to medium-powered high-frequency power processing applications [1], [2].…”