Switching losses prediction methods oriented to power MOSFETs – a review

Paula, Wesley Josias de; Tavares, Gabriel H. M.; Soares, Guilherme M.; Almeida, Pedro S.; Braga, Henrique A. C.

doi:10.1049/iet-pel.2019.1003

Cited by 11 publications

(3 citation statements)

References 35 publications

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“…In the literature, modeling of power semiconductor devices has been reported to be performed using behavioral, semi-physics, physics-based, semi-numerical, and numerical/analytical models [34]. Behavioral models are used to represent the device behavior rather than the device physics based on functions, and are considered a good trade-off between accuracy and simulation time [36]. Using mathematical techniques and correspondent circuits, a relatively high simulation speed can be achieved by behavioral models, but physics-based understanding into the device behavior is lost [37,38].…”

Section: Models Of Semiconductor Power Devicesmentioning

confidence: 99%

Wide Band Gap Devices and Their Application in Power Electronics

et al. 2022

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Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shift in regard to energy efficiency and working with respect to the devices based on mature silicon (Si). Gallium nitride (GaN) and silicon carbide (SiC) have been treated as one of the most promising WBG materials that allow the performance limits of matured Si switching devices to be significantly exceeded. WBG-based power devices enable fast switching with lower power losses at higher switching frequency and hence, allow the development of high power density and high efficiency power converters. This paper reviews popular SiC and GaN power devices, discusses the associated merits and challenges, and finally their applications in power electronics.

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Section: Models Of Semiconductor Power Devicesmentioning

confidence: 99%

Wide Band Gap Devices and Their Application in Power Electronics

et al. 2022

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“…Loss models based on analytical equations exist but they are often complex and strongly depend on assumptions and simplifications [2]. Direct loss measurements are often preferred to analytical models.…”

Section: Introductionmentioning

confidence: 99%

Calorimetric measurement methodology for comprehensive soft and hard switching loss characterisation

Bęczkowski,

Zäch,

Ahmad

et al. 2023

2023 IEEE Energy Conversion Congress and Exposition (ECCE)

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Accurate measurement of soft and hard switching losses is challenging. Electrical methods are prone to errors and calorimetric measurements most often cannot separate turn-on and turn-off energies. We present a calorimetric test setup capable of measuring and separating turn-on and turn-off energies in soft and hard switching regimes. The resulting loss map can be used to accurately predict power semiconductor losses, even when the converter is not fully in the soft-switching regime.

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“…Time-consuming analytical analysis by different subject experts was used in the past to overcome these complex challenges. Nowadays, the use of computer simulation in the design of electronic systems is a standard [1]- [3]. It is necessary to determine the functionality and efficiency of the converter during its development.…”

Section: Introductionmentioning

confidence: 99%