Wide Band Gap Devices and Their Application in Power Electronics

Abstract

Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shift in regard to energy efficiency and working with respect to the devices based on mature silicon (Si). Gallium nitride (GaN) and silicon carbide (SiC) have been treated as one of the most promising WBG materials that allow the performance limits of matured Si switching devices to be significantly exceeded. WBG-based power devices enable fast switching with lower power losses at higher switching frequency and hence, allow the development of high power density and high efficiency power converters. This paper reviews popular SiC and GaN power devices, discusses the associated merits and challenges, and finally their applications in power electronics.

The GaN trench MOSFET with adaptive voltage tolerance achieved through a dual-shielding structure

“…In the switching losses of power MOSFET, Q gd is crucial [19]. In the test circuit with I g = 0.1 mA, I 1 = 5 A, and V ds = 30 V [20], the PSGT-MOSFET has a Q gd of 110 nC cm −2 , which is 88% lower compared to the TG-MOSFET's Q gd of 910 nC cm −2 . This reduction in Q gd indicates that the presence of gate shielding in the SG region significantly reduces parasitic capacitance, allowing for a smaller Q gd to be achieved.…”

“…Figure 11 displays the gate charge simulation waveforms of the designed PSGT-MOSFET and the traditional TG-MOSFET, with the simulation circuit illustrated in illustration.In the switching losses of power MOSFET, Q gd is crucial[19]. In the test circuit with I g = 0.1 mA, I 1 = 5 A, and V ds = 30 V[20], the PSGT-MOSFET has a Q gd of 110 nC cm −2 , which is 88% lower compared to the TG-MOSFET's Q gd of 910 nC cm −2 . This reduction in Q gd indicates that the presence…”

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

“…Furthermore, it also is an enabling technology for the integration of renewable energy with power converters, electric vehicles, industrial automation, and modular battery management systems (BMSs) [5], generally at a higher voltage rate (currently, 650 V is the standard for high-voltage GaN, with some power device fabrications achieving a maximum voltage of up to 1200 V). The wide-bandgap semiconductors in all mentioned applications improve the power converters' features, reducing their weight, volume, and lifecycle cost [6]. Furthermore, the increasing 2 of 18 demand for compact and long, autonomous, battery-powered portable devices has led to the proposal of GaN technology as a possible attractive response for near-future applications.…”

“…Energies 2023, 16,3894 2 of 19 mum voltage of up to 1200 V). The wide-bandgap semiconductors in all mentioned applications improve the power converters' features, reducing their weight, volume, and lifecycle cost [6]. Furthermore, the increasing demand for compact and long, autonomous, battery-powered portable devices has led to the proposal of GaN technology as a possible attractive response for near-future applications.…”

Efficient GaN-on-Si Power Amplifier Design Using Analytical and Numerical Optimization Methods for 24–30 GHz 5G Applications

“…Wideband PA design benefits from the maturity of broadband matching theories and the in-depth study of optimization algorithms on one hand, and it depends on the continuous innovation and progress of semiconductor technology on the other. Highelectron-mobility transistors (HEMTs) based on gallium nitride (GaN), a third-generation compound semiconductor material, can handle a wider range of operating voltages, power densities, and temperatures than their traditional counterparts and work well in rugged environments [18][19][20]. They also have smaller form factors and higher port impedances for the same P out , which eases broadband matching.…”