GaN-based natural super junction diodes with multi-channel structures

Ishida, Hideyuki; Sugiyama, Daisuke; Matsuo, Hideaki; Yanagihara, Manabu; Uemoto, Yasuhiro; Ueda, T.; Tanaka, Tsuyoshi; Ueda, Daisuke

doi:10.1109/iedm.2008.4796636

Cited by 39 publications

(28 citation statements)

References 16 publications

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“…In the benchmark considering Vbr at IR = 1 mA/mm (Fig. 4(a)), the tri-anode SBDs with w of 400, 200 and 100 nm exhibited high power FOMs of 1355, 1255 and 865 MW/cm 2 , respectively, which are comparable to the best results for GaN lateral diodes on silicon and even other substrates [4], [18], [19]. Since 1 mA/mm is a large leakage current level to define the Vbr for power devices, 1 µA/mm level is becoming more commonly used to compare more fairly the blocking performance of power devices.…”

Section: (V)mentioning

confidence: 65%

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Matioli

2017

IEEE Electron Device Lett.

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Section: (V)mentioning

confidence: 65%

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Matioli

2017

IEEE Electron Device Lett.

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“…8 [9]. The dual-recess structure reduces the on-state resistance by the direct contact of Schottky and ohmic electrode with the channels.…”

Section: Inalgan Quaternary Alloy Capping Layersmentioning

confidence: 99%

Polarization engineering in GaN power transistors

Ueda

Murata

Nakazawa

et al. 2010

phys. stat. sol. (b)

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This paper reviews novel design of epitaxial structure for GaN power transistors to reduce the on-state resistance and to increase the breakdown voltage. It takes advantages of the fixed charges at the interfaces caused by the material's inherent polarization, and thus it can be called as polarization engineering. Both AlGaN/GaN superlattices and polarizationmatched InAlGaN quaternary alloy effectively reduce the onstate resistance by using them as capping layers over AlGaN/ GaN combined with the recessed-gate structure. These capping layers successfully eliminate the electron depletion which is caused by the balancing of the fixed charges. The series resistance across the interface is fully reduced so that these capping layers enable low on-state resistance. Proposed natural super junction (NSJ) model well explains the fact that the breakdown voltages of AlGaN/GaN hetero-junction field effect transistors (HFETs) are increased by the extension of the gate and drain spacing. The model assumes that the heterojunction can act an insulator since the polarization induced charges are always balanced at the top and the bottom surfaces. Taking advantages of the model, the fabricated multi-channel AlGaN/GaN diode with dual-recessed structure exhibits high breakdown voltage of 9400 V with low on-state resistance of 52 mV cm 2 , which reaches the predicted performance limit of GaN. The presented polarization engineering is very promising for future improvement of the device performances.

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“…devices), (2) devices with superjunctions (SJ), 2,3 and (3) devices with hetero superjunctions (HSJ). [4][5][6][7][8][9] Particularly, GaAs lateral HSJ devices that were considered unsuitable for high voltage applications are shown to promise excellent characteristics.…”

Section: Introductionmentioning

confidence: 99%

Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

Kushida

Sakaki

2019

IEEJ Trans.EIS

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Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III-V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product R ON ⋅A of their on-resistance R ON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on-resistance R ON ⋅A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of R ON ⋅A for HSJ devices can be lower than that of Siinsulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN-based HSJ devices but also GaAs-based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures. K E Y W O R D Sheterojunction, III-V semiconductors, lateral power devices, superjunction devices Electron Comm Jpn. 2019;102:33-38.

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GaN-based natural super junction diodes with multi-channel structures

Cited by 39 publications

References 16 publications

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Polarization engineering in GaN power transistors

Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

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