Gain Studies on Quantum-Dot Lasers With Temperature-Stable Emission Wavelength

Debusmann, R.; Schlereth, T. W.; Gerhard, S.; Kaiser, W.; Hoefling, Sven; Forchel, A.

doi:10.1109/jqe.2007.911693

Cited by 12 publications

(1 citation statement)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, a reduced temperature sensitivity of the emission wavelength for InAs QDs can be clearly observed. This feature of enhanced temperature stability of wavelength has also been extensively observed in InAs/(Al)GaAs QD lasers [39], which was attributed to a rather flat gain profile of a quantum dot layer.…”

Section: Temperature Properties Of Microdisk Laser On Sisupporting

confidence: 61%

Parametric study of high-performance 155 μm InAs quantum dot microdisk lasers on Si

Zhu¹,

Shi²,

Li³

et al. 2017

Opt. Express

View full text Add to dashboard Cite

In this paper, we present a parametric study of high performance microdisk lasers at 1.55 μm telecom wavelength, monolithically grown on on-axis (001) Si substrates incorporating quantum dots (QDs) as gain elements. In the optimized structure, seven layers of QDs were adopted to provide a high gain as well as a suppressed inhomogeneous broadening. The same laser structure employing quantum wells (QWs) on Si was concurrently evaluated, showing a higher threshold and more dispersive quantum efficiency than the QDs. Finally, a statistical comparison of these Si-based QD microdisk lasers with those grown on InP native substrates was conducted, revealing somewhat higher thresholds but of the same order. The monolithically grown QD microlasers on Si also demonstrated excellent temperature stability, with a record high characteristic temperature of 277 K. This work thus offers helpful insight towards the optimization of reliable Si-based QD lasers at 1550 nm.

show abstract

Section: Temperature Properties Of Microdisk Laser On Sisupporting

confidence: 61%