We have studied the response of a photonic crystal cavity to changes of the ambient refractive index. Transmission measurements of the cavity under different gaseous environments and pressures showed a linear dependence of the resonance wavelength on the refractive index of the ambient gas. A change of the refractive index by 10−4 leads to a shift of the resonance by 8pm, which is readily detectable due to the high quality factor of the cavity. The observed wavelength shifts agree well with finite-difference time domain simulations of the cavity.

We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size and predict a very large oscillator strength due to Coulomb effects. This is in stark contrast to the measured oscillator strength, which turns out to be much below the upper limit imposed by the strong confinement model. We attribute these findings to exciton localization in local potential minima arising from alloy intermixing inside the quantum dots.Comment: 4 pages, 3 figures, submitte

We demonstrate room temperature, continuous wave lasing of laser diodes based on AlGaAs whispering gallery mode (WGM) resonators (microcylinder and microring) embedding a quantum dot (QD) active layer. Using InGaAlAs QDs, high-Q (>60 000) lasing modes are observed around 910 nm, up to 50 °C. Lasing with similar performance is obtained around 1230 nm, using InAs QDs. Furthermore, we show that the current injection in the active part of the device is improved in ring resonators, leading to threshold currents of approximately 4 mA for a device with 80 μm diameter. This geometry also suppresses WGMs with a high radial order, thus simplifying the lasing spectra. In these conditions, stable single-mode and two-color lasing can be obtained.

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To characterize UO(2) for its possible use in desulfurization applications, the interactions of molecular sulfur dioxide (SO(2)) with a polycrystalline uranium dioxide film have been studied by means of X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption (TPD), and low-energy ion scattering (LEIS). The stoichiometric, oxygen-deficient, calcium-precovered and sodium-precovered UO(2) surfaces have been characterized. The changes in oxide reactivity upon creation of oxygen vacancies and coadsorption of sodium and calcium have been studied. After creation of a reduced UO(2-x) surface (x approximately 0.44) via Ar(+) sputtering, the U 4f XPS spectrum shows conspicuous differences that are good indicators of the surface stoichiometry. Molecular SO(x) formation (x = 2-4) is observed after SO(2) deposition onto stoichiometric UO(2) and onto UO(2) precovered with small amounts (<1 ML) of Na or Ca; complete dissociation of SO(2) is not observed. Heating leads to desorption of the SO(x) species and to transformation of SO(2) to SO(3) and SO(3) to SO(4). On oxygen-deficient UO(2) and on UO(2) precovered with large Na or Ca coverages (> or =4 ML), both the formation of SO(x)= species and complete dissociation of SO(2) are observed. A higher thermal stability of the sulfur components is observed on these surfaces. In all cases for which dissociation occurs, the XPS peak of atomic sulfur shows similar structure: three different binding states are observed. The reactivity of oxygen-deficient UO(2) and sodium- and calcium-precovered UO(2) (coverages > or = 4 ML) is attributed to charge transfer into the antibonding LUMO of the adsorbed molecule.