We present a study of the growth, morphology and optical properties of Ga(x)In(1-x)P quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.

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We report on the growth of AlGaInP quantum dots (QDs) with Al contents between 0% and 10% on GaP substrate by gas-source molecular beam epitaxy and the investigation of their morphological and low temperature photoluminescence properties. These high areal density QDs show short wavelength emission between 575 and 612 nm depending on their composition. The authors interpret the QD emission as originating from indirect type-II transitions. This interpretation is supported by a single-band effective-mass model, which allows us to describe the role of differing barrier composition in the QD emission. Time-resolved photoluminescence measurements are performed and discussed with respect to the calculations.

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