GaAsP Nanowires Grown by Aerotaxy

Metaferia, Wondwosen; Persson, Axel R.; Mergenthaler, Kilian; Yang, Fangfang; Zhang, Wei; Yartsev, Arkady; Wallenberg, L. Reine; Pistol, Mats Erik; Deppert, Knut; Samuelson, Lars; Magnusson, Martin H.

doi:10.1021/acs.nanolett.6b02367

Cited by 42 publications

(59 citation statements)

References 34 publications

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“…In real world applications, silicon solar cells have by far the largest market penetration, while III/V solar cells are only being used for space applications and as multi-junction solar cells for concentrator photovoltaics. Nanostructured solar cells promise a combination of high efficiency and low cost 179 , in particular when novel growth methods such as aerotaxy [180][181][182] would prove to yield high performance. We like to look at a nanowire solar cell as typical a 2µm thick film on a silicon 59,[183][184][185][186][187] or e.g.…”

Section: Economics Of Nanowire Solar Cellsmentioning

confidence: 99%

“…The substrate can subsequently be cleaned and re-used for a second and third growth run 168 . Alternatively, the substrate costs can be fully eliminated by using aerotaxy [180][181][182] . Challenges with aerotaxy are to vertically align the nanowires into an array, to achieve sizable solar light absorption on a large area as well as to provide electrical contacts.…”

Section: Economics Of Nanowire Solar Cellsmentioning

confidence: 99%

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Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

Haverkort

Garnett

Bakkers

2018

Applied Physics Reviews

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Present day nanowire solar cells have reached an efficiency of 17.8%. Nanophotonic engineering by nanowire tapering allows high solar light absorption. In combination with sufficiently high carrier selectivity at the contacts, the short-circuit current (Jsc) has presently reached 29.3 mA/cm 2 , reasonable close to the 34.6 mA/cm 2 theoretical limit for InP. Although further optimization of the current is important, an equally challenging condition to approach the Shockley Queisser (S-Q) limit is to increase the open-circuit voltage (Voc) towards the radiative limit. The key requirement to reach the radiative limit is to increase the external radiative efficiency at open-circuit conditions towards unity. It is the main purpose of this review to highlight recent progress in nanophotonic engineering to further enhance the open circuit voltage of a nanowire solar cell. In addition to material optimization for increasing the internal photoluminescence efficiency, the light extraction efficiency is a major design criterium for enhancing the external radiative efficiency and thus the Voc. Since the semiconductor substrate is a sink for internally generated photoluminescence, it is equally important to eliminate the loss of emitted light into the substrate. Even at the S-Q limit, the Voc is still substantially decreased by a photon entropy loss due to the conversion of a parallel beam of photons from the sun into an isotropic emission pattern, in which each individual photon is emitted into a random direction. The 46.7% ultimate solar cell limit for direct solar irradiation can only be approached, once the cell is capable to focus all emitted photoluminescence back to the sun. We will show that nanophotonic engineering provides a pathway to approach the ultimate limit.

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Section: Economics Of Nanowire Solar Cellsmentioning

confidence: 99%

Section: Economics Of Nanowire Solar Cellsmentioning

confidence: 99%

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

Haverkort

Garnett

Bakkers

2018

Applied Physics Reviews

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“…The Geode process aims to combine the efficiency of gas phase transport with the high productivity afforded by a very large substrate surface area. Solution-liquid-solid (SLS) [35][36][37][38][39][40] growth and Aerotaxy [41][42][43] , two competing methods for scaling nanowire production, are likely limited in one of these regards. SLS is similar to VLS, except the growth precursors and the resulting nanowires occupy the bulk of a liquid phase.…”

mentioning

confidence: 99%

The Geode Process I: Hollow Silica Microcapsules as a High Surface Area Substrate for Semiconductor Nanowire Growth

Mujica¹,

Tütüncüoǧlu²,

Mohabir³

et al. 2019

Preprint

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<div><div><div><p>We introduce and demonstrate critical steps toward the Geode process for the bottom-up synthesis of semiconductor nanowires. Central to the process is the design and fabrication of an unconventional, high surface area substrate: the interior surface of hollow silica microcapsules, assembled from silica particles via emulsion templating, and featuring porous walls to enable efficient gas transport. The interior surface of these hollow silica microcapsules is decorated with gold nanoparticles that seed nanowire growth via the vapor-liquid-solid (VLS) mechanism. We demonstrate the production of the necessary microcapsules and show how microcapsule structure and stability upon drying is influenced by the type of silica particles and use of a particle cross-linking agent. Finally, we demonstrate the synthesis of Si nanowires in the microcapsule interior.</p></div></div></div>

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“…Below the reactor bottom, there is a silicon substrate collecting the as-grown nanowires in an electrostatic precipitator. 106 20 Insets show the nanowire contacted to two-terminal Ni/In/Au electrodes. 22 The intensity ratio between Si LVM to transverse optical (TO) phonon mode as a function of distance to nanowire tip.…”

Section: Declaration By Authormentioning

confidence: 99%

“…Below the reactor bottom, there is a silicon substrate collecting the as-grown nanowires in an electrostatic precipitator. 106 Each system has its own merits, while MBE and MOCVD are generally the most common methods for epitaxial growth of III-V nanowires.…”

Section: Physical Processmentioning

confidence: 99%

Understanding the growth of III-V semiconductor nanowires with component addition in metal-organic chemical vapor deposition

Gao¹

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In recent decades, extensive research has been engaged into III-V semiconductor nanowires. It has been widely recognized that they have promising applications for electronic and optoelectronic devices due to their intrinsic material and unique geometry.Currently, the controllable growth of binary III-V nanowires can be achieved via Au-catalysed vapor-liquid-solid method in both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) system. Conventionally, the key parameters for tuning III-V nanowires' growths include the growth temperatures, precursor flow rates and the catalyst sizes. However, it has been found that the component addition, i.e. dopants and III/V incorporation, also influenced the controllable growth of III-V nanowires. Therefore, it is meaningful to understand this effect and its underlying influencing mechanism.Doping is a conventional way to introduce impurity atoms into host semiconductor to improve material properties by inducing free electrons or vacancies. The incorporation of impurity atoms can induce electrical property improvement, meanwhile may make the nanowire growth process more complex. However, the effect of doping on nanowire growth is still unclear. In this project, Sn-doped Au-catalysed GaAs nanowires were synthesized in MOCVD with a range of growth parameter including varied growth temperatures and tetraethyl-tin flow rates. The systematic characterizations on as-grown nanowires were carried out by electron microscopy. It was found that the Sn addition influenced the nanowires growth rate and structural quality in different ways at different growth temperatures.Suitable and tuneable bandgaps of ternary III-V nanowires make them suitable for electronic and optoelectronic devices, such as light emission diodes and tandem solar cells. However, elemental segregations have been a long-standing issue in the ternary nanowires, which could induce the core-shell heterostructures in the nanowires. The formation mechanism of core and shell need to be further clarified in order to control the compositional configuration in nanowires, which is meaningful for optimizing their performances in devices. In this project, InGaP nanowires were synthesized in MOCVD and their morphological, structural and compositional characteristics were investigated systematically by electron microscopy.The formation mechanism of the core-shell structure and the axial compositional gradient were discussed. Furthermore, the effect of catalyst size on the growth of hierarchical structured InGaP nanowires was demonstrated. XI

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GaAsP Nanowires Grown by Aerotaxy

Cited by 42 publications

References 34 publications

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

The Geode Process I: Hollow Silica Microcapsules as a High Surface Area Substrate for Semiconductor Nanowire Growth

Understanding the growth of III-V semiconductor nanowires with component addition in metal-organic chemical vapor deposition

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