Ga2O3 films formed by electrochemical oxidation

The effect of annealing on the properties of Ga2O3 anodic films

“…Ga 2 O 3 films with thicknesses between 200-300 nm were grown by anodic oxidation of n GaAs wafers with the donor concentration N d = (1-2) × 10 16 cm -3 .The film fabrication technology and measurement tech nique were described in [1].…”

“…The effect of oxygen plasma on the capacitance of samples annealed at 900°C is opposite to the changes in C for the unannealed V/Ni-GaAs-Ga 2 O 3 -V/Ni structures. It was shown in study [1] that the capaci tance of the unannealed samples increases with dura tion of the oxygen plasma treatment. Irrespective of the oxygen plasma treatment conditions before anneal ing, the capacitance of the V/Ni-GaAs-Ga 2 O 3 -V/Ni structures after annealing at 900°C changed insignifi cantly with increasing voltage upon both positive and negative potentials on the control electrode (curves 3-6 in Fig.…”

“…OF GALLIUM OXIDE FILMS The electrical characteristics of anodic Ga 2 O 3 films without annealing were described in [1].…”

Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

“…The roughness of continuous β Ga 2 O 3 layers grown on the GaSe (0001) surface using such a tech nique did not exceed ~0.2 nm. We note that the surface roughness of β Ga 2 O 3 layers grown on n GaAs by electrochemical oxidation [22] or thermal oxidation of the GaSe(0001) surface in air at T a > 300°C [7] was several nm. The β Ga 2 O 3 compound is a defect n type semiconductor that has a monoclinic structure with the lattice parameters a = 12.23 Å, b = 3.04 Å, c = 5.8 Å, β = 103.7°.…”

Optimization of Opto-Electrical and Photocatalytic Properties of SnO2 Thin Films Using Zn2+ and W6+ Dopant Ions

“…Due to its electrical and optical properties (transparent for visible and reflective for infrared light) and good chemical and mechanical stability, it is commonly used in oxidation catalysis, gas sensing, transparent conducting oxides and opto-electronic devices [1][2][3]. The properties of SnO 2 nanostructures can be enhanced in several ways such as impurity doping, polymeric additives and annealing [4,5]. However, the stoichiometric SnO 2 leads to low performance because of the low intrinsic carrier density and mobility, mainly as a result of the double ionized vacancies serving as donors [6][7][8].…”