The effect of annealing on the properties of Ga2O3 anodic films

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga2O3 Films

“…While these results agree, in general, with results reported in literature for Ga 2 O 3 films fabricated by physical methods, differences arise due to the differences in synthesis conditions adopted for deposition, substrate materials, and physical parameters (thickness, density, etc.). For instance, while the noted trend is very similar to annealing behavior of polycrystalline Ga 2 O 3 films made by anodic oxidation of n-GaAs wafers, 26 there are significant difference in the observed values of roughness values and grain size and shapes. The Ga 2 O 3 anodic films exhibit linear grain sizes, where grains were in the form of squares with a side length of 600−700 nm.…”

“…The Ga 2 O 3 anodic films exhibit linear grain sizes, where grains were in the form of squares with a side length of 600−700 nm. 26 After annealing, Ga 2 O 3 anodic film roughness increased to 100−120 nm, which exceedingly higher compared to sputterdeposited films. While the trend is similar, the differences are primarily attributed to the preparation methods, that is, anodic oxidation under oxygen plasma versus sputter deposition under reactive conditions.…”

“…The annealing of the β-Ga 2 O 3 films grown by anodic oxidation of n-GaAs wafers induces a phase evolution sequence. 26 When annealed in an argon atmosphere at temperatures of 600 and 900 °C, for 30 min, the reaction tendency was observed to be fully different. 26 The gallium oxide films with no thermal treatment react readily with acids confirming the presence of the α-phase.…”

“…26 When annealed in an argon atmosphere at temperatures of 600 and 900 °C, for 30 min, the reaction tendency was observed to be fully different. 26 The gallium oxide films with no thermal treatment react readily with acids confirming the presence of the α-phase. 26 The gallium oxide films annealed at 600 °C dissolved in a hydrochloric acid solution, and the films annealed at 900 °C did not react with the acids.…”

“…26 The gallium oxide films annealed at 600 °C dissolved in a hydrochloric acid solution, and the films annealed at 900 °C did not react with the acids. 26 Also, after annealing at 600 and 900 °C, the electrical conductivity of Ga 2 O 3 films increased and the voltage growth decreased from 80−90 to 4−6 V. 26 The annealing of pulsed laser deposition (PLD) deposited β-Ga 2 O 3 films on (0001) oriented sapphire substrates indicate the films were polycrystalline with preferential orientation along [401]. 30 The films were of the same composition, no matter the different temperatures of annealing.…”