Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

Abstract

Features of the formation of Au/Ni/〈C〉/n Ga 2 O 3 hybrid nanostructures on a Van der Waals sur face (0001) of "layered semiconductor-ferroelectric" composite nanostructures (p GaSe〈KNO 3 〉) are stud ied using atomic force microscopy. The room temperature current-voltage characteristics and the depen dence of the impedance spectrum of hybrid structures on a bias voltage are studied. The current-voltage characteristic includes a resonance peak and a portion with negative differential resistance. The current attains a maximum at a certain bias voltage, when electric polarization switching in nanoscale three dimen sional inclusions in the layered GaSe matrix occurs. In the high frequency region (f > 10 6 Hz), inductive type impedance (a large negative capacitance of structures, ~10 6 F/mm 2 ) is detected. This effect is due to spin polarized electron transport in a series of interconnected semiconductor composite nanostructures with mul tiple p GaSe〈KNO 3 〉 quantum wells and a forward biased "ferromagnetic metal-semiconductor" polarizer (Au/Ni/〈C〉/n + Ga 2 O 3 /n Ga 2 O 3 ). A shift of the maximum (current hysteresis) is detected in the currentvoltage characteristics for various directions of the variations in bias voltage.

Electrochemical, optical, and magnetic properties of Ni x InSe (0 < x ≤ 1) intercalation compounds

“…Electrochemical intercalation produces no changes in the crystal structure of layered semicon ductors, and the intercalate localizes at point and sur face defects in interlayer spaces, producing nanostruc tures of different morphologies [17,18]. As shown by Kakhramanov [19] and Aleskerov and Kakhramanov [20], the intercalation of Ві 2 Те 3 with metal (Cu, Ag, and Ni) atoms leads to accumulation, redistribution, and formation of intercalate nanoinclusions in inter layer spaces along the plane of the (0001) layers; that is, an additional layer of metal nanoinclusions forms in the crystal lattice.…”

Morphology, chemical composition, and electrical characteristics of hybrid (Ni-C) nanocomposite structures grown on the van der Waals GaSe(0001) surface

“…Thin Ga 2 O 3 oxide layers on the GaSe(0001) sur face can be formed using both thermal annealing of the crystals in an oxygen containing atmosphere and the oxidation of this surface under UV light irradiation [15]. When the irradiation is performed using the technology described in [15], the radiation with a pho ton energy greater than the GaSe band gap is absorbed in the upper layers of the crystal.…”

“…When the irradiation is performed using the technology described in [15], the radiation with a pho ton energy greater than the GaSe band gap is absorbed in the upper layers of the crystal. Anisotropic layered GaSe crystals have a low thermal conductivity along the C axis.…”

“…The formation of Ga 2 O 3 nanostructures on the van der Waals GaSe(0001) surface was performed according to the technique described in [15] under irra diation with high energy UV light in an oxygen contain ing atmosphere. The vertical hybrid structures, which contained several layers of Ni@C nanoparticles embed ded in the wide band gap Ga 2 O 3 oxide, were grown by successive deposition and oxidation of Ni-C nanocom posite material layers onto the GaSe(0001) surface.…”

“…To avoid thermal etching of the van der Waals surface, the temperature of this substrate should not exceed 300°C [14]. Earlier, we used this method for the deposition of nickel and the Ni-C nanocomposite material on GaSe(0001) in the formation of hybrid structures [15]. The surface morphology and chemical composition of these nanostructures have not been investigated in detail.…”