X-ray diffraction evidence is presented for the incorporation of molecular hydrogen into GaSe crystals, which markedly reduces their c -axis resistivity and shifts the excitonic line to higher energies.
lntroductionBismuth telluride crystals belong to the family of layered semiconductors having space group Did and the tetradymite structure. Layered compounds are characterized by strong covalent bonds inside the layers and they have predominantly van der Waals nature of interlayer bonds. The existence of van der Waals gaps allows one to insert guest atoms between layers. The question arises whether the energy spectrum of host material would strongly change after an intercalation or the intercalated crystal would possess the same energy band structure as the host crystal. In graphite intercalation compounds this question is widely discussed [l]. The influence of intercalation of metal atoms on the electrophysical properties on layered semiconductors A"'BV', InSe, for example, was studied in [2] for T > 77 K. The energy spectrum ofintercalated layered semiconductors was not investigated.Galvanomagnetic properties and the energy spectrum of p-and n-type Bi,Te, intercalated with Li and Ba were investigated in the present paper with the help of quantum oscillations of magnetoresistance.
ExperimentalWe synthesized single crystals of p-Bi,Te, intercalated with Li and Ba. The intercalation was performed by the method of pulling with an electric field applied along the layers of a single crystal as described in [3] for InSe. This method gives the possibility to obtain crystals intercalated with a concentration of metallic atoms up to 10" cm-,. Some parameters of the samples at T = 4.2 K are shown in Table 1. The number of intercalated I ) 119899 Moscow, Russia.
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