Features of the formation of Au/Ni/〈C〉/n Ga 2 O 3 hybrid nanostructures on a Van der Waals sur face (0001) of "layered semiconductor-ferroelectric" composite nanostructures (p GaSe〈KNO 3 〉) are stud ied using atomic force microscopy. The room temperature current-voltage characteristics and the depen dence of the impedance spectrum of hybrid structures on a bias voltage are studied. The current-voltage characteristic includes a resonance peak and a portion with negative differential resistance. The current attains a maximum at a certain bias voltage, when electric polarization switching in nanoscale three dimen sional inclusions in the layered GaSe matrix occurs. In the high frequency region (f > 10 6 Hz), inductive type impedance (a large negative capacitance of structures, ~10 6 F/mm 2 ) is detected. This effect is due to spin polarized electron transport in a series of interconnected semiconductor composite nanostructures with mul tiple p GaSe〈KNO 3 〉 quantum wells and a forward biased "ferromagnetic metal-semiconductor" polarizer (Au/Ni/〈C〉/n + Ga 2 O 3 /n Ga 2 O 3 ). A shift of the maximum (current hysteresis) is detected in the currentvoltage characteristics for various directions of the variations in bias voltage.
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